Conference Program and Schedule

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Day 1: Thursday, February 23

Day 1: Thursday, February 23

Day 2: Friday, February 24

Day 2: Friday, February 24

 

 

 

 

 

 

 

 

 

 


ITC 2017: Program of Events
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(Last Updated 02/14/17)

 

Day 1: Thursday, February 23

 Last NameFirst Name School/OrganizationCountryAbstract Title
8:15-8:30ITC 2017 Kickoff
TFTs and OLEDS
8:30-10:00JangJinINVKyung Hee UniversitySouth KoreaTFT technologies for active-matrix organic light-emitting diode displays
FujisakiYoshihideINVScience & Technology Research LaboratoriesJapanOxide and organic-based thin-film transistors for flexible display applications
AnthopoulosThomasINVKAUSTSaudi ArabiaMultilayer metal oxide transistors: Combining high electron mobility with exceptional bias stability
10:00-10:30Coffee Break
Silicon TFTs
10:30-12:00Mohammed-BrahimTayebINVUniversity Rennes 1FranceLTPS-TFT with embedded PbS quantum dots as a near-infrared photodetector
NoguchiTakashiINVUniversity of RyukyusJapanLow temperature crystallization of Si films for TFTs by laser annealing on flexible panels
MizukamiRyutatsuHiroshima UniversityJapanFabrication of single crystalline silicon thin film transistors and logic circuits on plastic substrate by meniscus force mediated layer transfer technique
AliAbid S.Friedrich-Alexander Univ. (FAU)GermanyHydrogen passivation for solution-processed amorphous silicon thin-film transistors
12:00-1:00LUNCH
TFT Devices and Circuits
1:00-3:15SirringhausHenningINVCambridgeU.K.Low-voltage complementary circuits based on n-type oxide and p-type organic TFTs
KimSung KiINVLG DisplaySouth KoreaOxide TFT development for AMLCD and AMOLED applications
JurchescuOana D.INVWake Forest UniversityUSAIsomer co-existence in organic semiconductors and its effect on the performance of organic field-effect transistors
LeeSuhuiKyung Hee UniversitySouth KoreaInvestigation of spreading current in metal-over-active and active-over-metal TFT structure by thermal analysis
LiXiulingKyung Hee UniversitySouth KoreaEffect of Sn doping ratio on p-channel solution processed nickle oxide thin film transisor
KoswaththageCharith JayandaUniversity of RyukyusJapanUltra-high carrrier mobility InSb film by rapid thermal annealing for advanced sensor applications on glass
3:15-3:45Coffee Break
Biosensing TFTs
3:45-6:00TorsiLuisaINVUniversità degli Studi di Bari Aldo MoroItalyUltra-sensitive bio-markers detection with an electrolyte gated organic transistor
UemuraTakafumiINVOsaka UniversityJapanBiosignal amplification circuits based on ultra-flexible organic thin-film transistors
OwensRoisinINVEcole des Mines de St. EtienneFranceConducting polymers at the interface with biology
MaioloLucaInstitute for Microelectronics and Microsystems, CNRItalyFlexible low temperature polysilicon TFTs technology meets the biosensing world
MaitaFrancescoInstitute for Microelectronics and Microsystems, CNRItalyUltra-flexible active MEA based on poly-Si TFTs for advanced brain impants
MehlmanYoniPrinceton UniversityUSAHigh-speed scanning circuit based on metal-oxide thin-film-transistors for reduction of large-area to CMOS IC connections
6:00-6:15Depart for Banquet
7:00-9:00BANQUET
Tentative Schedule
Last Updated: 02/07/17

Day 2: Friday, February 24

 Last NameFirst Name School/OrganizationCountryAbstract Title
TFT Technology
8:30-10:00SomeyaTakaoINVThe University of TokyoJapanUltraflexible organic thin-film electronics for wearables and biomedical applications
SporeaRadu A.INVUniversity of SurreyU.K.Design and fabrication considerations for heterostructure and bulk barrier source-gated transistors
BaeJunhyeonYonsei UniversitySouth KoreaOxide semiconductor metallization using DUV irradiation for coplanar oxide TFT
RotherMarcelGermanyHighly reproducible aerosol-jet printing of polymer-wrapped (6,5) carbon nanotubes as semiconductor in high on/off-ratio field-effect transistors
10:00-10:30Coffee Break
New Materials and Substrates
10:30-12:00ÖsterbackaRonaldINVÅbo Akademi University
FinlandPaper electronics using environmentally friendly devices
HongYongtaekINVSeoul National UniversitySouth KoreaStrain-engineered platform for stretchable hybrid electronics applications
JeongJae KyengINVHanyang UniversitySouth KoreaOrigin of gate-bias-thermal instabilies in amorphous metal oxide thin-film transistors
12:00-1:00LUNCH
TFT Device Physics
1:00-3:15YangBo-RuINVSun Yat-Sen UniversityChinaStability investigation on amorphous InSnZnO thin film transistors under negative gate bias and light stressing with a top nitrogen doped active layer
YooSeunghyupINVKAISTSouth KoreaEnabling highly flexible electronics via polymer dielectric layers based on initiated chemical vapor deposition 
LiuChuanINVSun Yat-Sen UniversityChinaEffect of molecular structures on charge transport in solution-processed polumeric transistors: semiconductors and dielectrics
DausAlwinSwiss Federal Institute of TechnologySwitzerlandFlexible ferroelectric/moving-charge IGZO TFT memory based on BaTiO3-PVA nanocomposites
SchießlStefan P.Universität HeidelbergGermanyExperimental and theoretical investigation of charge transport in single-walled carbon nanotube networks
CantarellaGiuseppeSwiss Federal Institute of TechnologySwitzerlandHighly stretchable electronics using non-standard substrate geometry
3:15-3:45Coffee Break
Printed Electronics & Chemistry
3:45-6:30SubramanianVivekINVUniversity of California at BerkeleyUSAPrinted electronics: Innovations in materials, processes, and devices
ChoGyoujinINVSunchon National UniversitySouth KoreaR2R gravure printed TFT-active matrix and NFC tags
SonarPrashantINVQueensland University of TechnologyAustraliaMolecular engineering for the design and synthesis of high performance pi-functional organic semiconductors and their devices
GuoXiaojunINVShanghai Jiao Tong UniversityChinaHigh performance solution processed low voltage polymer TFT based on high-k relaxor ferroelectric polymer dielectric with excellent bias stability
JungSungjunePohang University of Science and TechnologySouth Korea3D inkjet-printed flexible organic transistors and circuits
MeyerSebastianUniversity of Duisburg-EssenGermanyHigh mobility, inkjet printed a-InOx TFTs in back-channel-etching configuration
LiangKellyUniversity of TexasUSAField distribution and mobility enhancement of double gate polymer thin film transistors
6:30Closing Remarks
Tentative Schedule
Last Updated: 02/07/17