Toby’s research is concentrating on epitaxial integration of rare earth sesquioxides on the III-V semiconductor gallium nitride (GaN) by MBE utilizing Zintl-interlayers. The broader motivation for his research is given by the consideration that as semiconductor technology moves beyond silicon, GaN is seen as a strong contender for high-power, high-temperature and high-frequency applications. Toby’s research is conducted in the Materials Physics Laboratory at UT Austin and involves the growth of the materials in UHV and subsequent determination of materials properties by the use of x-ray and electron diffraction and photoelectron spectroscopy. Toby started his PhD in the Demkov group in the summer of 2015 after having obtained a MA in Physics from UT in 2014 and a BS in Physics from University of Würzburg, Germany in 2013.