III-V digital alloys, which are the multi-component generalization of the short-period superlattice, offer unprecedented design degrees of freedom to manipulate and enhance interband optical nonlinearities. While this program will explore several III-V digital alloy materials, we focus primarily on AlInAsSb; specifically an artificial alloy comprised of complex layer stacks of its four component binaries: AlAs, AlSb, InAs, and InSb. A key goal is their eventual growth on silicon. Synergistically with Thrust II, we will also explore interband nonlinearities using digital alloys of wide-band gap complex oxides.
Webpage for the Atomic-scale Manipulations of Interband Optical Nonlinearities (AtoMs-IONs) Multidisciplinary University Research Initiative (MURI) Program supported by the Air Force Office of Scientific Research (AFOSR)
