Publications

Anodized Nickel Foam for Oxygen Evolution Reaction in Fe-Free and Unpurified Alkaline Electrolytes at High Current Densities
Y.J. Son, K. Kawashima, B.R. Wygant, C.H. Lam, J.N. Burrow, H.Celio, A. Dolocan, J.G. Ekerdt, and C.B. Mullins. : ACS Nano, 15, 3468−3480 (2021).

Vacuum ultraviolet enhanced atomic layer etching of ruthenium films
B.M Coffey, H.C. Nallan,  J. G. Ekerdt. J. Vac. Sci. Technol. A 39, 012601 (2021).

A Vacuum Ultraviolet-Enhanced Oxidation Mechanism for Pd: Near-Surface Oxidation for Atomic Layer Etching
B.M. Coffey, H.C. Nallan, J.R. Engstrom,  J. G. Ekerdt. ACS Appl. Mater. Interfaces,12, 50985−50995 (2020).

Vacuum Ultraviolet-Enhanced Oxidation—A Route to the Atomic Layer Etching of Palladium Metal
B.M Coffey, H.C. Nallan, J.R. Engstrom, C.H. Lam,  J. G. Ekerdt. Chem Mater., 32,  6035-6042 (2020).

Epitaxial growth of high-k BaxSr1-xTiO3 thin films on SrTiO3 (001) substrates by atomic layer deposition
T.T. Le and  J. G. Ekerdt. J. Vac. Sci. & Tech. A, 38 032401 (2020).

Role of template layers for heteroepitaxial growth of lanthanum oxide on GaN (0001) via atomic layer deposition
P.Y. Chen, T. Hadamek, S. Kwon, F. Al-Quaiti, A. B. Posadas, M. J. Kim, A. A. Demkov, J. G. Ekerdt. J. Vac. Sci. & Tech. A, ALD2020 012403 (2020).

Epitaxial, electro‐optically active barium titanate thin films on silicon by chemical solution deposition
B. I. Edmondson, S. Kwon, C. H. Lam, J. E. Ortmann, A. A. Demkov, M. J. Kim, J. G. Ekerdt, J. Am, Ceram. Soc. 00:1-10 (2019).

Atomic layer deposition of epitaxial ferroelectric barium titanate on Si(001) for electronic and photonic applications
E. L. Lin, A. B. Posadas, L. Zheng, J. E. Ortmann, S. Abel, J. Fompeyrine, K.Lai, A. A. Demkov, J. G. Ekerdt, J. Appl. Phys. 126, 064101 (2019).

Area-Selective Atomic Layer Deposition of Crystalline BaTiO3
B. M. Coffey, E. L. Lin, P. Y. Chen, J. G. Ekerdt, Chem. Mater. 31, 15, 5558-5565 (2019).

Epitaxial BaSnO3 and SrSnO3 perovskite growth on SrTiO3(001) via atomic layer deposition
P. Y. Chen, C. H. Lam, B. I. Edmondson, A. B. Posadas, A. A. Demkov,  J. G. Ekerdt, J. Vac. Sci. & Tech. 37, 050902 (2019).

Area-Selective Deposition of Ruthenium by Combining Atomic Layer Deposition and Selective Etching
M. F. J. Vos, S. N. Chopra, M. A. Verheijen, J. G. Ekerdt, S. Agarwal, W. M. M. Kessels, A. J. M. Mackus, Chem. Mater. 31, 3878-3882 (2019).

Strain-dependence of χ(2) in thin film barium strontium titanate
N D. Foster, B. I. Edmondson, J. G. Ekerdt, D. J. Smith, M. C. Downer, AIP Advan. 9, 025312 (2019).

Atomic layer deposition of cobalt oxide on oxide substrates and low temperature reduction to form ultrathin cobalt metal films
Z. Zhang, H. C. Nallan, B. M. Coffey, T. Q. Ngo, T. Pramanik, S. K. Banerjee, J. G. Ekerdt, J. Vac. Sci. & Tech. 37, 010903 (2019).

Effect of SrTiO3 oxygen vacancies on the conductivity of LaTiO3/SrTiO3 heterostructures
B. I. Edmondson, S. Liu, S. Lu, H. Wu, A. B. Posadas, D. J. Smith, X. P. A. Gao, A. A. Demkov, J. G. Ekerdt, J. Appl. Phys. 124, 185303 (2018).

Crystalline SrZrO3 Deposition on Ge(001) by Atomic Layer Deposition for High-k Dielectric Applications
S. Hu, L. Ji, P. Y. Chen, B. I. Edmondson, H. L. Chang, A. Posadas, H. W. Wu, E. T. Yu, D. J. Smith, A. A. Demkov, J. G. Ekerdt, J. Appl. Phys. 124, 044102 (2018).

Preventing carbon contamination of Ge (001) during atomic layer deposition
with a barium-based Zintl layer
S. Hu, J. G. Ekerdt, J. Vac. Sci. & Tech. 36, 041403 (2018).

Cubic Crystalline Erbium Oxide Growth on GaN(0001) by Atomic Layer Deposition
P. Y. Chen, A. B. Posadas, S. Kwon, Q. Wang, M. J. Kim,, A. A. Demkov, J. G. Ekerdt, J. Appl. Phys. 122, 215302 (2017).

Epitaxial growth of barium titanate thin films on germanium via atomic layer deposition
E. L. Lin, A. B. Posadas, H. Wu, D. J. Smith, A. A. Demkov, J. G., Ekerdt, J. Crys. Growth 476 , 6-11 (2017).

Zintl layer formation during perovskite atomic layer deposition on Ge (001)
S. Hu, E. L. Lin, A. K. Hamze, A. Posadas, H. Wu, D. J. Smith, A. A. Demkov, J. G. Ekerdt, J. Chem. Phys. 146, 052817 (2017).

Monolithic integration of perovskites on Ge(001) by atomic layer deposition: a case study with SrHfxTi1−xO3
S. Hu, M. D. McDaniel, A. Posadas, C. Hu, H. Wu, E. T. Yu, D. J. Smith, A. A. Demkov, J. G. Ekerdt, MRS Commun. 6, 125-132 (2016).

Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition
E. L. Lin, B. I. Edmondson, S. Hu, and J. G. Ekerdt, J. Vis. Exp. 113, 54268 (2016).

Precursor dependent nucleation and growth of ruthenium films during chemical vapor deposition
W. Liao and J. G. Ekerdt, J. Vac. Sci. Technol. A 34, 041514 (2016).

Ru nucleation and thin film smoothness improvement with ammonia during chemical vapor deposition
W. Liao and J. G. Ekerdt, J. Vac. Sci. Technol. A 34, 031508 (2016).

Selective Growth of Titanium Nitride on HfO2 across Nanolines and Nanopillars
S. N. Chopra, Z. Zhang, C, Kaihlanen, and J. G. Ekerdt, Chem. Mater. 28(14), 4928-4934 (2016).

Chemical nature of active sites for defect-mediated nucleation on silicon dioxide
J. M. McCrate and J. G. Ekerdt , AIChE Journal 62, 367-372 (2016).

Atomic layer deposition of perovskite oxides and their epitaxial integration with Si, Ge, and other semiconductors
M. D. McDaniel, T. Q. Ngo, S. Hu, A. Posadas, A. A., Demkov, J. G. Ekerdt, Appl. Phys. Rev. 2, 041301 (2015).

Integrated films of transition metal oxides for information technology
A. A. Demkov, P. Ponath, K. Fredrickson, A. B. Posadas, M.D. McDaniel, T.Q. Ngo, J. G. Ekerdt, Microelectron. Eng. 147, 285-289 (2015).

Quasi-two-dimensional electron gas at the interface of gamma-Al2O3/SrTiO3 heterostructures grown by atomic layer deposition
T. Q. Ngo, N. J. Goble, A. Posadas, K. J. Kormondy, S. R. Lu, M. D. McDaniel, J. Jordan-Sweet, D. J. Smith, X. P. A. Gao, A. A. Demkov, J. G. Ekerdt, J. Appl. Phys. 118, 115303 (2015).

Quasi-two-dimensional electron gas at the epitaxial alumina/SrTiO3 interface: Control of oxygen vacancies
K. J. Kormondy, A. B. Posadas, T. Q. Ngo, S. R. Lu, N. Goble, J. Jordan-Sweet, X. P. A. Gao, D. J. Smith, M. R. McCartney, J. G. Ekerdt, A. A. Demkov, J. Appl. Phys. 117, 095303 (2015).

Atomic layer deposition of crystalline SrHfO3 directly on Ge (001) for high-k dielectric applications
D. McDaniel, C. Hu, S. Lu, T. Q. Ngo, A. Posadas, A. Jiang, D. J. Smith, E. T. Yu, A. A. Demkov, and J. G. Ekerdt, J. Appl. Phys. 117, 054101-(1-9) (2015).

A silicon-based photocathode for water reduction with an epitaxial SrTiO3 protection layer and a nanostructured catalyst
L. Ji, M. D. McDaniel, S. Wang, H. Huang, X. Li, A. B. Posadas, Y. F. Chang, A. A. Demkov, A. J. Bard, J. G. Ekerdt, and E. T. Yu),  Nature Nanotechnol. 10, 84-90 (2015).

Highly Controllable and Stable Quantized Conductance and Resistive Switching Mechanism in Single-Crystal TiO2 Resistive Memory on Silicon
C. Hu, M. D. McDaniel, A. Posadas, A. A. Demkov, J. G. Ekerdt, and E. T. Yu), Nano Lett. 14, 4360-4367 (2014).

A chemical route to monolithic integration of crystalline oxides on semiconductors
M. D. McDaniel, T. Q. Ngo, A. Posadas, C. Hu, S. Lu, D. J. Smith, E. T. Yu, A. A. Demkov, and J. G. Ekerdt, Adv. Mater. Interfaces 1, 1400081 (2014)

Incorporation of La in epitaxial SrTiO3thin films grown by atomic layer deposition on SrTiO3-buffered Si (001) substrates
M. D. McDaniel, A. Posadas, T. Q. Ngo, C. Karako, J. Bruley, V. Narayanan, A. A. Demkov, and J. G. Ekerdt) ,” J. Appl. Phys. 115, 224108-(1-8) (2014)

Chemical vapor deposition of ruthenium–phosphorus alloy thin films: Using phosphine as the phosphorus source
D. E. Bost and J. G. Ekerdt, Thin Solid Films Vol. 558 160-164 (2014).

Growth of crystalline LaAlO3 by atomic layer deposition
T. Q. Ngo, M. D. McDaniel, A. B. Posadas,  A. A. Demkov, J. G. Ekerdt), Proc. of SPIE Vol. 8987 898712-9 (2014).

Epitaxial c-axis oriented BaTiO3 thin films on SrTiO3-buffered Si(001) by atomic layer deposition
T. Q. Ngo, A. B. Posadas, M. D. McDaniel, C. Hu, J. Bruley, J. G. Ekerdt, Appl. Phys. Lett. 104, 082910 (2014).

Atomic layer deposition of photoactive CoO/SrTiO3 and CoO/TiO2 on Si(001) for visible light driven photoelectrochemical water oxidation
T. Q. Ngo, A. B. Posadas, H. Seo, S. Hoang, M. D. McDaniel, D. Utess, D. H. Triyoso, C. B. Mullins, A. A. Demkov, J. G. Ekerdt), J. Appl. Phys. 114, 084901 (1-8) (2013).

Monolithic integration of oxides on semiconductors
A. A. Demkov, A. B. Posadas, H. Seo, M. Choi, K. J. Kormondy, P. Ponath, R. C. Hatch, M. D. McDaniel, T. Q. Ngo, J. G. Ekerdt) ECS Trans., 54(1), 255-269 (2013).

Effect of CO on Ru Nucleation and Ultra-Smooth Thin Film Growth by Chemical Vapor Deposition at Low Temperature
W. Liao and J. G. Ekerdt) Chemistry of Materials 25, 1793-1799 (2013).

Improvement of Solar Energy Conversion with Nb-incorporated TiO2 Hierarchical Micro-spheres (Son Hoang, Thong Q. Ngo, Sean P. Berglund, Raymond R. Fullon, John G. Ekerdt, and C. Buddie Mullins) ChemPhysChem 14, 2270-2276 (2013)

Epitaxial growth of LaAlO3 on SrTiO3-buffered Si(001) substrates by atomic layer deposition (Thong Q. Ngo , Agham Posadas, Martin D. McDaniel, Domingo A. Ferrer, John Bruley, Chris Breslin, Alexander A. Demkov, and John G. Ekerdt) J. Crys. Growth 363, 150-157 (2013).

Pretreatment of yellow pine in an acidic ionic liquid: Extraction of hemicellulose and lignin to facilitate enzymatic digestion (Blair J. Cox, John G. Ekerdt) Bioresource Technology (2013).

Epitaxial strontium titanate films grown by atomic layer deposition on SrTiO3-buffered Si(001) substrates (Martin D. McDaniel, Agham Posadas, Thong Q. Ngo, Ajit Dhamdhere, David J. Smith, Alexander A. Demkov, and John G. Ekerdt) Journal of Vacuum Science and Technology A 31, 01A136- (1-9) (2013).

Growth and characterization of epitaxial anatase TiO2(001) on SrTiO3-buffered Si(001) using atomic layer deposition (M.D. McDaniel, A. Posadas, T. Wang, A.A. Demkov, J.G. Ekerdt)Thin Solid Films 520, 6525-6530 (2012).

Depolymerization of oak wood lignin under mild conditions using the acidic ionic liquid 1-H-3-methylimidazolium chloride as both solvent and catalyst (Blair J. Cox, John G. Ekerdt) Bioresource Technology 118, 584-588 (2012).

Growth of epitaxial oxides on silicon using atomic layer deposition: Crystallization and Annealing of TiO2 on SrTiO3-buffered Si(001) (M.D. McDaniel, A. Posadas, T. Q. Ngo, A. Dhamdhere, D. J. Smith, A. A. Demkov, J. G. Ekerdt) Journal of Vacuum Science and Technology B 30, 04E111-(1-6) (2012).

Hydrolytic cleavage of β-O-4 ether bonds in lignin model compounds in an ionic liquid with metal chlorides (Songyan Jia, Blair J. Cox, Xinwen Guo, Z. Conrad Zhang, John G. Ekerdt) Industrial & Engineering Chemistry Research 50, 849-855 (2011).

Enhanced Nucleation of Pt Particles on Boron-Treated Highly Oriented Pyrolytic Graphite via Chemical Vapor Deposition (Tyler D.-M. Elko Hansen, Joseph M. McCrate, John G. Ekerdt) Journal of Physical Chemistry C 115, 9048-9052 (2011).

Atomic Layer Deposition of Tantalum-Incorporated Hafnium Dioxide: Strategies to Enhance Thermal Stability (Tuo Wang, John G. Ekerdt) Journal of the Electrochemical Society 158, G185-G193 (2011).

Effect of subsurface boron on photoluminescence from silicon nanocrystals (N. Salivati, N. Shaull, J. J. McCrate, J. G. Ekerdt) Surface Science 605, 799-801  (2011).

Catalytic degradation of lignin model compounds in acidic imidizolium based ionic liquids: Hammett acidity and anion effects (Blair J. Cox, Songyan Jia, Z. Conrad Zhang, John G. Ekerdt) Polymer Degradation and Stability 96, 426-431 (2011).

Structure versus thermal stability: the periodic structure of ALD-grown Al-incorporated HfO2 films and its effect on amorphous stabilization (T. Wang, J. G. Ekerdt) Chemistry of Materials 23, 1679-1685 (2011).

Hot-wire CVD of Ge nanoparticles on silicon-etched silicon dioxide (Joseph M. McCrate, Navnethakrishan Salivati, John G. Ekerdt) Journal of Crystal Growth 321 131-135 (2011).

Optical properties of La-incorporated HfO2 upon crystallization (Tuo Wang, Junwei Wei, Michael C. Downer, John G. Ekerdt) Applied Physics Letters 98, 122904 (2011).

Structure and Properties of Li-Si Alloys: A First Principles Study (Hyunwoo Kim, Chia-Yun Chou, John G. Ekerdt, Gyeong S. Hwang) Journal of Physical Chemistry C 115, 2514-2521 (2011).

Elaboration and quantitative investigation of BCN-type films by dynamic SIMS using the MCsx+ mode (F. Wu, N. Valle, R. Fitzpatrick, J. G. Ekerdt, L. Houssiau, H-N. Migeon), Surf. Interface Anal. 43, 669-672 (2011).

On the Nature and Behavior of Li Atoms in Si: A First Principles Study (Hyunwoo Kim, Eun Kyoung, Gyeong S. Hwang, John G. Ekerdt, Chia-Yun Chou) J. Physical Chemistry C 114, 17942-17946 (2010).

Cleaving the β-O-4 bonds of lignin model compounds in an acidic ionic liquid, 1-H-3-methylimidazolium chloride: an optional strategy for the degradation of lignin (S. Jia, B. J. Cox, X. Guo, Z. Conrad Zhang, J. G. Ekerdt), ChemSusChem 3, 1078-1084 (2010).

Hafnia: energetics of thin films and nanoparticles (W. Zhou, S. V. Ushakov, T. Wang, J. G. Ekerdt, A. A. Demkov, A. Navrotsky) Journal of Applied Physics 107, 123514(1-7) (2010).

Effect of surface chemistry on quantum confinement and photoluminescence from ammonia-passivated silicon nanocrystals (N. Salivati, N. Shaull, J. J. McCrate, J. G. Ekerdt) Journal of Physical Chemistry Letters 1, 1957-1961 (2010).

Sub-nanoscale Lanthanum Distribution in Lanthanum-incorporated Hafnium Oxide Thin Films Grown Using Atomic Layer Deposition (T. Wang, J. G. Ekerdt), Chemistry of Materials 22, 3798-3806 (2010).

Decomposition of a phenolic lignin model compound over organic N-bases in an ionic liquid (S. Jia, B. J. Cox, X. Guo, Z. Conrad Zhang, J. G. Ekerdt), Holzforschung 64, 577-580 (2010).

Chemistry of Silicon Nanocrystal Surfaces Exposed to Ammonia, (N. Salivati, N. Shuall, J. McCrate, J. G. Ekerdt), Journal of Physical Chemistry C 114, 16924-16928 (2010).

Chemically Capping Copper with Cobalt (L. B. Henderson and J. G. Ekerdt), Microelectronic Engineering 87, 588-592 (2010).

Nanocrystalline Cobalt-based Films with High Thermal Stability from a Single Molecule (L. B. Henderson, J. H. Rivers, D. E. Bost, R. A. Jones, and J. G. Ekerdt) Journal Vacuum Science and Technology A 28, 54-60 (2010).

Effect of phosphorus and carbon incorporation in amorphous cobalt films prepared by chemical vapor deposition (L. B. Henderson and J. G. Ekerdt), J. Electrochemical Society 157, D29-D34 (2010).

Electrical characteristics of thin boron carbo-nitride films on Ge(100) and Si(100) (P. R. Fitzpatrick and J. G. Ekerdt), J. Vacuum Science and Technology B 27, 2366-2374 (2009).

Influence of surface chemistry on photoluminescence from deuterium-passivated silicon nanocrystals (N. Salivati, N. Shaull, E. Baskin, V. Garber, J. McCrate, and J. G. Ekerdt), Journal of Applied Physics 106, 063121(1-8) (2009).

The effects of an iodine source on nucleation and film properties of Ru films deposited by chemical vapor deposition (K. M. Thom, J. G. Ekerdt), Thin Solid Films 518, 36-42 (2009).

Atomic layer deposition growth of hafnium-lanthanum oxide nanolaminate films to stabilize the amorphous phase (Tuo Wang, J. G. Ekerdt), Chemistry of Materials 21, 3096-3101 (2009).

NANOLAB at The University of Texas at Austin: A Model for Interdisciplinary Undergraduate Science and Engineering Education (A. T. Heitsch, J. G. Ekerdt, B. A. Korgel), Chemical Engineering Education 43, 225-231 (2009).

Temperature programmed desorption studies of deuterium passivated silicon nanocrystals (N. Salivati, J. G. Ekerdt), Surface Science 603, 1121-1125 (2009).

Surface chemistry of (2,4-dimethylpentadieny)(ethylcylcopentadienyl)Ru on polycrystalline Ta (K. M. Thom, J. G. Ekerdt), Surface Science 603, 920-931 (2009).

Chemical Vapor Deposition of Amorphous Cobalt-Phosphorus Alloy Films (L. B. Henderson, J. G. Ekerdt) Electrochemical and Solid-State Letters 12, D36-D38 (2009).

Oxidation Resistance of Thin Boron Carbo-nitride Films on Ge(100) and Ge Nanowires (P. R. Fitzpatrick, T. Wang, A. T. Heitsch, B. A. Korgel, J. G. Ekerdt), Thin Solid Films 517, 3686-3694 (2009).

Hot-Wire Chemical Vapor Deposition of Silicon Nanoparticles on Quartz (N. Salivati, Y. Q. An, M. C. Downer, J. G. Ekerdt), Thin Solid Films 517, 3481-3483 (2009).

Time-to-failure Analysis of 5 nm Amorphous Ru(P) as a Copper Diffusion Barrrier (L. B. Henderson and J. G. Ekerdt) Thin Solid Films 517, 1645-1649 (2009).