UT Shield

etylab: nanoscale characterization and devices

The University of Texas at Austin

teaching

Courses at The University of Texas at Austin (2009 – ):

NOTE: UT Austin course web sites are accessible to authorized users via http://canvas.utexas.edu

2020-21:

  • EE 302: Introduction to Electrical Engineering (F, freshman level)
  • Modified service for MRSEC Directorship (S)

2019-20:

  • EE 302: Introduction to Electrical Engineering (F, freshman level)
  • EE 396K-23: Semiconductor Heterostructures (S, graduate level)

2018-19:

  • EE 302: Introduction to Electrical Engineering (F, freshman level)
  • Modified service for MRSEC Directorship (S)

2017-18:

  • EE 302: Introduction to Electrical Engineering (F, freshman level)
  • EE 396K-23: Semiconductor Heterostructures (S, graduate level)

2016-17:

  • Modified service for major proposal preparation (F)
  • EE 302: Introduction to Electrical Engineering (S, freshman level)

2015-16:

  • EE 302: Introduction to Electrical Engineering (F, freshman level)
  • EE 396K-23: Semiconductor Heterostructures (S, graduate level)

2014-15:

  • EE 302: Introduction to Electrical Engineering (F, freshman level)
  • EE 396K-23: Semiconductor Heterostructures (S, graduate level)

2013-14:

  • EE 302: Introduction to Electrical Engineering (F, freshman level)
  • EE 396K-23: Semiconductor Heterostructures (S, graduate level)

2012-13:

  • EE 302: Introduction to Electrical Engineering (F, freshman level)
  • EE 396K-23: Semiconductor Heterostructures (S, graduate level)

2011-12:

  • EE 302: Introduction to Electrical Engineering (F, freshman level)
  • EE 396K-23: Semiconductor Heterostructures (S, graduate level)

2010-11:

  • EE 302: Introduction to Electrical Engineering (F, freshman level)
  • EE 396K-23: Semiconductor Heterostructures (S, graduate level)

2009-10:

  • EE 396K-23: Semiconductor Heterostructures (F, graduate level)
  • EE 396V: Advanced Solid-State Materials and Nanostructures (S, graduate level)

Courses at University of California, San Diego (1992 – 2009):

2008-09:

  • ECE 212A: Principles of Nanoscience (F, graduate level)
  • ECE 135B: Electronic Devices (W, senior level)
  • ECE 230C: Solid State Electronics III (S, graduate level)

2007-08:

  • ECE 212A: Principles of Nanoscience (F, graduate level)
  • ECE 236A: Semiconductor Heterostructure Materials (W, graduate level)
  • ECE 230C: Solid State Electronics III (S, graduate level)

2006-07:

  • ECE 135A: Semiconductor Physics (F, senior level)
  • ECE 236A: Semiconductor Heterostructure Materials (W, graduate level)
  • ECE 230C: Solid State Electronics III (S, graduate level)

2005-06:

  • ECE 236A: Semiconductor Heterostructure Materials (W, graduate level)
  • Sabbatical-in-residence (W)
  • ECE 230C: Solid State Electronics III (S, graduate level)
  • ECE 294: Solid-State Electronics Graduate Seminar (S, graduate level)

2004-05:

  • ECE 135A: Semiconductor Physics (F, senior level)
  • ECE 236A: Semiconductor Heterostructure Materials (F, graduate level)
  • ECE 135B: Electronic Devices (W, senior level)
  • ECE 230C: Solid State Electronics III (S, graduate level)

2003-04:

  • ECE 135A: Semiconductor Physics (F, senior level)
  • ECE 135B: Electronic Devices (W, senior level)
  • ECE 230C: Solid State Electronics III (S, graduate level)

2002-03:

  • ECE 103: Fundamentals of Devices and Materials (F, junior level)
  • Course relief due to heavy University service
  • ECE 230C: Solid State Electronics III (S, graduate level)

2001-02:

  • ECE 103: Fundamentals of Devices and Materials (F, junior level)
  • Course relief due to heavy University service
  • ECE 230C: Solid State Electronics III (S, graduate level)

2000-01:

  • ECE 103: Fundamentals of Devices and Materials (F, junior level)
  • ECE 134: Electronic Materials Science of Integrated Circuits (W, senior level)
  • ECE 230C: Solid State Electronics III (S, graduate level)

1999-2000:

  • ECE 103: Fundamentals of Devices and Materials (F, junior level)
  • ECE 136: Fundamentals of Semiconductor Device Fabrication (W, senior level)
  • ECE 230C: Solid State Electronics III (S, graduate level)

1998-99:

  • ECE 103: Fundamentals of Devices and Materials (F, junior level)
  • Sabbatical leave (W)
  • ECE 230C: Solid State Electronics III (S, graduate level)

1997-98:

  • ECE 103: Fundamentals of Devices and Materials (F, junior level)
  • ECE 134: Electronic Materials Science of Integrated Circuits (W, senior level)
  • ECE 230C: Solid State Electronics III (S, graduate level)

1996-97:

  • ECE 103: Fundamentals of Devices and Materials (F, junior level)
  • ECE 136: Fundamentals of Semiconductor Device Fabrication (W, senior level)
  • ECE 230C: Solid State Electronics III (S, graduate level)

1995-96:

  • ECE 103: Fundamentals of Devices and Materials (F, junior level)
  • ECE 5B: Our Natural and Artificial Environment – Computers (W, introductory/nonmajor level)

1994-95:

  • ECE 138: Introduction to Semiconductor Devices (F, senior level)
  • ECE 5B: Our Natural and Artificial Environment – Computers (W, introductory/nonmajor level)
  • ECE 121C: Electromagnetism III (S, senior level)

1993-94:

  • ECE 239: Nanometer-Scale Probes and Devices (F, advanced graduate level)
  • ECE 5B: Our Natural and Artificial Environment – Computers (W, introductory/nonmajor level)
  • ECE 121C: Electromagnetism III (S, senior level)
  • ECE 138: Introduction to Semiconductor Devices (S, senior level)

1992-93:

  • ECE 5B: Our Natural and Artificial Environment – Computers (W, introductory/nonmajor level)
  • ECE 121C: Electromagnetism III (S, senior level)