UT Shield

etylab: nanoscale characterization and devices

The University of Texas at Austin

publications

NOTE: Copyrights for certain articles may have been transferred to the appropriate publishers.  Reprints available from this site are provided for personal research use only.

archival journal publications:

  1. T. H. Kim, K. Fu, C. Yang, Y. Zhao, and E. T. Yu, “Electronic structure of epitaxially grown and regrown GaN pn junctions characterized by scanning Kelvin probe and capacitance microscopy,” J. Appl. Phys. 131, 015704 (2022).
    PDF reprint
  2. H. Yang, Y. Wang, X. Zou, R. X. Bai, Z. C. Wu, S. Han, T. Chen, S. Hu, H. Zhu, L. Chen, D. W. Zhang, J. C. Lee, E. T. Yu, D. Akinwande, and L. Ji, “Wafer-Scale Synthesis of WS2 Films with In Situ Controllable p-Type Doping by Atomic Layer Deposition,” Research 9862483 (2021).
    PDF reprint
    Supplementary Information file
  3. H. Yang, Y. Wang, X. Zou, R. X. Bai, S. Han, Z. Wu, Q. Han, Y. Zhang, H. Zhu, L. Chen, X. Lu, Q. Sun, J. C. Lee, E. T. Yu, D. Akinwande, and L. Ji, “Growth Mechanisms and Morphology Engineering of Atomic Layer-Deposited WS2,” ACS Appl. Mater. Interfaces 13, 43115 (2021).
    PDF reprint
    Supplementary Information file
  4. S. Lee, L. Ji, A. C. De Palma, and E. T. Yu, “Scalable, highly stable Si-based metal-insulator-semiconductor photoanodes for water oxidation fabricated using thin-film reactions and electrodeposition,” Nature Commun. 12, 3982 (2021).
    PDF reprint
    Supplementary Information file
  5. Houqiang Fu, Kai Fu, Chen Yang, Hanxiao Liu, Kevin A. Hatch, Prudhvi Peri, Dinusha Herath Mudiyanselage, Bingjun Li, Tae-Hyeon Kim, Shanthan R. Alugubelli, Po-Yi Su, Daniel C. Messina, Xuguang Deng, Chi-Yin Cheng, Reza Vatan Meidanshahi, Xuanqi Huang, Hong Chen, Tsung-Han Yang, Jingan Zhou, Andrew M. Armstrong, Andrew A. Allerman, Edward T. Yu, Jung Han, Stephen M. Goodnick, David J. Smith, Robert J. Nemanich, Fernando A. Ponce, and Yuji Zhao, “Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress,” Mater. Today https://doi.org/10.1016/j.mattod.2021.04.011 (2021).
    PDF reprint
  6. G. Cossio, E. D. Yu, S. R. Tatavarti, B. Scandrett, and E. T. Yu, “Omnidirectional current enhancement from laminated motheye packaging for high-efficiency flexible III-V solar modules,” IEEE J. Photovolt. 11, 685 (2021).
    PDF reprint
  7. R. Liu, X. Peng, C. H. Mak, Y. Tang, Z. Li, Q. Ruan, E. T. Yu, P. K. Chu, and H.-Y. Hsu, “Cost-effective liquid-junction solar devices with plasma-implanted Ni/TiN/CNF hierarchically structured nanofibers,” J. Electroanal. Chem. 887, 115167 (2021).
    PDF reprint
  8. Y. Peng, Q. Ruan, C. H. Lam, F. Meng, C.-Y. Guan, S. P. Santoso, X. Zou, E. T. Yu, P. K. Chu, and H.-Y. Hsu, “Plasma-implanted Ti-doped hematite photoanodes with enhanced photoelectrochemical water oxidation performance,” J. Alloys Compd. 870, 159376 (2021).
    PDF reprint
    Supplementary Information file
  9. B. Gawlik, A. R. Barr, A. Mallavarapu, E. T. Yu, and S. V. Sreenivasan, “Spectral Imaging and Computer Vision for High-Throughput Defect Detection and Root-Cause Analysis of Silicon Nanopillar Arrays,” J. Micro Nano-Manuf. 9, 010904 (2021).
    PDF reprint
  10. A. Yuksel, E. T. Yu, M. Cullinan, and J. Murthy, “Electromagnetic Thermal Energy Transfer in Nanoparticle Assemblies Below Diffraction Limit,” J. Thermal Sci. Eng. Appl. 13, 021108 (2021).
    PDF reprint
  11. A. C. De Palma, G. Cossio, K. Jones, J. Quan, X. Li, and E. T. Yu, “Strain-dependent luminescence and piezoelectricity in monolayer transition metal dichalcogenides,” J. Vac. Sci. Technol. B 38, 042205 (2020).
    PDF reprint
  12. A. Yuksel, M. Cullinan, E. T. Yu, and J. Murthy, “Near-field plasmonics of gold nanoparticles in dielectric media,” J. Quant. Spectrosc. Radiat. Transf 254, 107207 (2020).
    PDF reprint
  13. A. Yuksel, E. T. Yu, M. Cullinan, and J. Murthy, “The Effects of Variability in Plasmonic Nanoparticle Packing on Optical Scattering and Extinction Cross-section,” IEEE Trans. Compon. Packaging Manuf. Technol. doi: 10.1109/TCPMT.2020.3005339 (2020).
    PDF reprint
  14. G. Cossio and E. T. Yu, “Zeta Potential Dependent Self-Assembly for Very Large Area Nanosphere Lithography,” Nano Lett. 20, 5090 (2020).
    PDF reprint
    Supplementary Information file
  15. A. Yuksel, E. T. Yu, M. Cullinan, and J. Murthy, “Investigation of heat transfer modes in plasmonic nanoparticles,” Int. J. Heat Mass Transf. 156, 119869 (2020).
    PDF reprint
  16. B. Gawlik, C. Barrera, E. T. Yu, and S. V. Sreenivasan, “Hyperspectral imaging for high-throughput, spatially resolved spectroscopic scatterometry of silicon nanopillar arrays,” Opt. Expr. 28, 14209 (2020).
    PDF reprint
  17. A. Yuksel, E. T. Yu, M. Cullinan, and J. Murthy, “Thermal Transport in Nanoparticle Packings Under Laser Irradiation,” J. Heat Transfer 142, 032501 (2020).
    PDF reprint
  18. C. J. Brennan, K. Koul, N. Lu, and E. T. Yu, “Out-of-plane electromechanical coupling in transition metal dichalcogenides,” Appl. Phys. Lett. 116, 053101 (2020).
    PDF reprint
    Supplementary Information file
  19. X. Zou, L. Ji, J. Ge, D. R. Sadoway, E. T. Yu, and A. J. Bard, “Electrodeposition of crystalline silicon films from silicon dioxide for low-cost photovoltaic applications,” Nature Commun. 10, 5772 (2019).
    PDF reprint
    Supplementary Information file
  20. T. D. Siegler, Y. Zhang, A. Dolocan, L. C. Reimnitz, A. Torabi, M. K. Abney, J. Choi, G. Cossio, D. W. Houck, E. T. Yu, X. Li, T. B. Harvey, D. J. Milliron, and B. A. Korgel, “Addition of Monovalent Silver Cations to Ch3NH3PbBr3 Produces Crystallographically Oriented Perovskite Thin Films,” ACS Appl. Energy Mater. DOI:10.1021/acsaem.9b01298 (2019).
    PDF reprint
    <a href="https://sites.utexas.edu/etylab

    https://sites.utexas.edu/etylab/files/2019/08/ACS_AEM_9b01298_2019_SI.pdf”>Supplementary Information file

  21. E. S. Walker, S. Muschinske, C. J. Brennan, S. R. Na, T. Trivedi, S. D. March, Y. Sun, T. Yang, A. Yau, D. Jung, A. F. Briggs, E. M. Krivoy, M. L. Lee, K. M. Liechti, E. T. Yu, D. Akinwande, and S. R. Bank, “Composition-dependent structural transition in epitaxial Bi1-xSbx thin films on Si(111),” Phys. Rev. Mater. 3, 064201 (2019).
    PDF reprint
  22. P. Li, L. Ji, N. Gao, H. Wang, S. Ge, K. Huang, J. Kang, and E. T. Yu, “Peak splitting and locking behavior arising from Fano interference between localized surface plasmons and cavity modes,” Phys. Rev. B 99, 125420 (2019).
    PDF reprint
  23. A. Yuksel, E. T. Yu, M. Cullinan, and J. Murthy, “Effect of particle size distribution on near-field energy transfer within the nanoparticle packings,” J. Photonics Energy 9, 032707 (2019).
    PDF reprint
  24. B. M. Gawlik, G. Cossio, H. Kwon, Z. Jurado, B. Palacios, S. Singhal, A. Alu, E. T. Yu, and S. V. Sreenivasan, “Structural coloration with hourglass-shaped vertical silicon nanopillar arrays,” Opt. Expr. 26, 30952 (2018).
    PDF reprint
  25. H.-Y. Hsu, L. Ji, C. Zhang, C. H. Mak, R. Liu, T. Wang, X. Zou, S.-Y. Leu, and E. T. Yu, “Ultra-stable 2D layered methylammonium cadmium trihalide perovskite photoelectrodes,” J. Mater. Chem. C DOI: 10/1039/c8tc02153h (2018).
    PDF reprint
    Supplementary Information file
  26. J. Liao, L. Ji, J. Zhang, N. Gao, P. Li, K. Huang, E. T. Yu, and J. Kang, “Influence of the substrate to the LSP coupling wavelength and strength,” Nanoscale Res. Lett. 13, 280 (2018).
    PDF reprint
  27. H. Wang, P. Li, N. Gao, K. Huang, J. Kang, L. Ji, and E. T. Yu, “Asymmetric light reflectance by Fano resonance between Fresnel reflection and localized surface plasmons,” Appl. Phys. Express 11, 092001 (2018).
    PDF reprint
  28. S. Hu, L. Ji, P.-Y. Chen, H.-L. Chang, A. Posadas, H. W. Wu, E. T. Yu, D. J. Smith, A. A. Demkov, and J. G. Ekerdt, “Crystalline SrZrO3 deposition on Ge (001) by atomic layer deposition for high-k dielectric application,” J. Appl. Phys. 124, 044102 (2018).
    PDF reprint
  29. S. Lee, J. Ahn, L. Mathew, R. Rao, Z. J. Zhang, J. H. Kim, S. K. Banerjee, and E. T. Yu, “Highly improved passivation of c-Si surfaces using a gradient i a-Si:H layer,” J. Appl. Phys. 123, 163101 (2018).
    PDF reprint
  30. Z. J. Zhang, A. C. De Palma, C. J. Brennan, G. Cossio, R. Ghosh, S. K. Banerjee, and E. T. Yu, “Probing nanoscale variations in strain and band structure of MoS2 on Au nanopyramids using tip-enhanced Raman spectroscopy,” Phys. Rev. B 97, 085305 (2018).
    PDF reprint
    Supplementary Information file
  31. L. Ji, H.-Y. Hsu, J. C. Lee, A. J. Bard, and E. T. Yu, “Solution-processed epitaxial growth of hybrid halide perovskites and high-performance photodetectors,” Nano Lett. 18, 994 (2018).
    PDF reprint
    Supplementary Information file
  32. S. Vishniakou, R. Chen, Y. G. Ro, C. J. Brennan, C. Levy, R. Liu, E. T. Yu and S. A. Dayeh, “Improved performance of zinc oxide thin film transistor pressure sensors and a demonstration of a commercial chip compatibility with the new force sensing technology,” Adv. Mater. Technologies DOI: 10.1002/admt.201700279 (2018).
    PDF reprint
  33. X. Zou, L. Ji, X. Yang, T. Lim, E. T. Yu, and A. J. Bard, “Electrochemical Deposition of Thin Film Silicon p-n Junction in Molten Salt,” J. Am. Chem. Soc. 139, 16060 (2017).
    PDF reprint
  34. C. J. Brennan, R. Ghosh, K. Koul, S. K. Banerjee, N. Lu, and E. T. Yu, “Out-of-plane electromechanical response of monolayer molybdenum disulfide measured by piezoresponse force microscopy,” Nano Lett. 17, 5464 (2017).
    PDF reprint
    Supplementary Information file
  35. A. Yuksel, E. T. Yu, J. Murthy, and M. Cullinan, “Effect of Substrate and Nanoparticle Spacing on Plasmonic Enhancement in Three-Dimensional Nanoparticle Structures,” J. Micro Nano-Manuf. 5, 040903 (2017).
    PDF reprint
  36. X. Yang, L. Ji, X. Zou, T. Lim, J. Zhao, E. T. Yu, and A. J. Bard, “Toward Cost-effective Manufacturing of Si Solar Cells: Electrodeposition of High Quality Si Thin Films in a CaCl2-based Molten Salt,” Angew. Chemie Int. Ed. 56, 15078 (2017).
    PDF reprint
    Supplementary Information file
  37. L. Ji, H.-Y. Hsu, X. Li, K. Huang, Y. Zhang, J. C. Lee, A. J. Bard, and E. T. Yu, “Localized dielectric breakdown and antireflection coating in metal–oxide–semiconductor photoelectrodes,” Nature Mater. 16, 127 (2017).
    PDF reprint
    Supplementary Information file
  38. H. Y. Hsu, L. Ji, M. Du, J. Zhao, E. T. Yu, and A. J. Bard, “Optimization of Lead-free Organic–inorganic Tin Halide Perovskite Semiconductors by Scanning Electrochemical Microscopy,” Electrochimica Acta 220, 205 (2016).
    PDF reprint
  39. S. Hu, M. D. McDaniel, A. Posadas, C. Hu, H. W. Wu, E. T. Yu, D. J. Smith, A. A. Demkov, and J. G. Ekerdt, “Monolithic integration of perovskites on Ge(001) by atomic layer deposition: a case study with SrHfxTi1−xO3,” MRS Communications DOI: 10.1557/mrc.2016.36 (2016).
    PDF reprint
    Supplementary Information file
  40. H. Y. Hsu, L. Ji, M. Du, J. Zhao, E. T. Yu, and A. J. Bard, “Optimization of PbI2/MeNH3PbI3 Perovskite Composites by Scanning Electrochemical Microscopy,” J. Phys. Chem. C 120, 19890 (2016).
    PDF reprint
    Supporting Information file
  41. C. Hu, M. D. McDaniel, A. Jiang, A. Posadas, A. A. Demkov, J. G. Ekerdt, and E. T. Yu, “A low-leakage epitaxial high-k gate oxide for germanium metal-oxide-semiconductor devices,” ACS Appl. Mater. Interfaces 8, 5416 (2016).
    PDF reprint
  42. K. Huang, W. Pan, J. F. Zhu, J. C. Li, N. Gao, C. Liu, L. Ji, E. T. Yu, and J. Kang, “Asymmetric light reflectance from metal nanoparticle arrays on dielectric surfaces,” Sci. Rep. 5, 18331 (2015).
    PDF reprint
  43. H.-Y. Hsu, L. Ji, H. S. Ahn, J. Zhao, E. T. Yu, and A. J. Bard, “A liquid junction photoelectrochemical solar cell based on p-type MeNH3PbI3 perovskite with 1.05V open-circuit photovoltage,” J. Am. Chem. Soc. 137, 14758 (2015).
    PDF reprint
  44. X. H. Li, P.-C. Li, L. Ji, C. Stender, S. R. Tatavarti, K. Sablon, and E. T. Yu, “Integration of subwavelength optical nanostructures for improved antireflection performance of mechanically flexible GaAs solar cells fabricated by epitaxial liftoff,” Sol. Energy Mater. Solar Cells 143, 567 (2015).
    PDF reprint
  45. C. Brennan, J. Nguyen, E. T. Yu, and N. Lu, “Interface adhesion between 2D materials and elastomers measured by buckle delamination,” Adv. Mater. Interfaces 2, 1500176 (2015).
    PDF reprint
  46. Z. J. Zhang, D. C. Dillen, E. Tutuc, and E. T. Yu, “Strain and hole gas induced Raman shifts in Ge-SixGe1-x core-shell nanowires using tip-enhanced Raman spectroscopy,” Nano Lett. 15, 4303 (2015).
    PDF reprint
    Supporting Information file
  47. K. W. Park, E. M. Krivoy, H. P. Nair, S. R. Bank, and E. T. Yu, “Cross-sectional scanning thermal microscopy of ErAs/GaAs superlattices grown by molecular beam epitaxy,” Nanotechnology 26, 265701 (2015).
    PDF reprint
  48. M. D. McDaniel, C. Hu, S. Lu, T. Q. Ngo, A. Posadas, A. Jiang, D. J. Smith, E. T. Yu, A. A. Demkov, and J. G. Ekerdt, “Atomic layer deposition of crystalline SrHfO3 directly on Ge (001) for high-k dielectric applications,” J. Appl. Phys. 117, 054101 (2015).
    PDF reprint
  49. L. Ji, M. D. McDaniel, S. Wang, A. B. Posadas, X. H. Li, H. Huang, J. C. Lee, A. A. Demkov, A. J. Bard, J. G. Ekerdt, and E. T. Yu, “A silicon-based photocathode for water reduction with an epitaxial SrTiO3 protection layer and a nanostructured catalyst,” Nature Nanotechnol. 10, 84 (2015).
    PDF reprint
    Supplementary Information file
  50. X. Li, P.-C. Li, L. Ji, C. Stender, C. McPheeters, S. R. Tatavarti, K. Sablon, and E. T. Yu, “Subwavelength nanostructures integrated with polymer-packaged III-V solar cells for omnidirectional, broad-spectrum improvement of photovoltaic performance,” Prog. Photovolt: Res. Appl. 23, 1398 (2015).
    PDF reprint
  51. V. D. Dasika, E. M. Krivoy, H. P. Nair, S. J. Maddox, K. W. Park, D. Jung, M. L. Lee, E. T. Yu, and S. R. Bank, “Increased InAs quantum dot size and density using bismuth as a surfactant,” Appl. Phys. Lett. 105, 253104 (2014).
    PDF reprint
  52. N. Gao, W. Lin, X. Chen, K. Huang, S. Li, J. Li, H. Chen, X. Yang, L. Ji, E. T. Yu, and J. Kang, “Quantum state engineering with ultra-short-period (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection,” Nanoscale 6, 14733 (2014).
    PDF reprint
  53. X. H. Li, V. D. Dasika, P.-C. Li, L. Ji, S. R. Bank, and E. T. Yu, “Minimized open-circuit voltage reduction in GaAs/InGaAs quantum well solar cells with bandgap-engineered graded quantum well depths,” Appl. Phys. Lett. 105, 123906 (2014).
    PDF reprint
  54. C. Hu, M. D. McDaniel, A. Posadas, A. A. Demkov, J. G. Ekerdt, and E. T. Yu, “Highly controllable and stable quantized conductance and resistive switching mechanism in single-crystal TiO2 resistive memory on silicon,” Nano Lett. 14, 4360 (2014).
    PDF reprint
    Supporting Information file
  55. P. C. Li, J. C. Chang, A. LaPorta, and E. T. Yu, “Fabrication of large area birefringent nanocylinders for optical torque wrench via nanosphere lithography,” Nanotechnology 25, 235304 (2014).
    PDF reprint
  56. M. D. McDaniel, T. Q. Ngo, A. Posadas, C. Hu, S. Lu, D. J. Smith, E. T. Yu, A. A. Demkov, and J. G. Ekerdt, “A chemical route to monolithic integration of crystalline oxides on semiconductors,” Adv. Mater. Interfaces 1, 1400081 (2014).
    PDF reprint
  57. T. Q. Ngo, A. B. Posadas, M. D. McDaniel, C. Hu, J. Bruley, E. T. Yu, A. A. Demkov, and J. G. Ekerdt, “Epitaxial c-axis oriented BaTiO3 thin films on SrTiO3-buffered Si (001) by atomic layer deposition,” Appl. Phys. Lett. 104, 082910 (2014).
    PDF reprint
  58. L. Ji, Y.-F. Chang, B. Fowler, Y.-C. Chen, T.-M. Tsai, K.-C. Chang, M.-C. Chen, T.-C. Chang, S. M. Sze, E. T. Yu, and J. C. Lee, “Integrated One Diode – One Resistor Architecture in Nano-Pillar SiOx Resistive Switching Memory by Nano-Sphere Lithography,” Nano Lett. 14, 813 (2014).
    PDF reprint
  59. X. H. Li, P. C. Li, D. Z. Hu, D. M. Schaadt, and E. T. Yu, “Angular dependence of light trapping in In0.3Ga0.7As/GaAs quantum-well solar cells,” J. Appl. Phys. 115, 044303 (2014).
    PDF reprint
  60. A. K. Satpati, N. Arroyo-Curras, L. Ji, E. T. Yu, and A. J. Bard, “Electrochemical Monitoring of TiO2 Atomic Layer Deposition (ALD) by Chronoamperometry and Scanning Electrochemical Microscopy (SECM),” Chem. Mater. 25, 4165 (2013).
    PDF reprint
  61. C. Hu, K. W. Park, A. Posadas, J. L. Jordan-Sweet, A. A. Demkov, and E. T. Yu, “Voltage-controlled ferromagnetism and magnetoresistance in LaCoO3/SrTiO3 heterostructures,” J. Appl. Phys. 114, 183909 (2013).
    PDF reprint
  62. Y.-F. Chang, L. Ji, Y. Wang, P.-Y. Chen, F. Zhou, F. Xue, B. Fowler, E. T. Yu, and J. C. Lee, “Investigation of edge- and bulk-related resistive switching behaviors and backward-scan effects in SiOx-based resistive switching memory,” Appl. Phys. Lett. 103, 193508 (2013).
    PDF reprint
  63. C. Hu, M. D. McDaniel, J. G. Ekerdt, and E. T. Yu, “High ON/OFF Ratio and Quantized Conductance in Resistive Switching of TiO2 on Silicon,” IEEE Electron Device Lett. 34, 1385 (2013).
    PDF reprint
  64. P. C. Li and E. T. Yu, “Flexible, low-loss, large-area, wide-angle, wavelength-selective plasmonic multilayer metasurface,” J. Appl. Phys. 114, 133104 (2013).
    PDF reprint
  65. P. C. Li and E. T. Yu, “Large-area omnidirectional antireflection coating on low-index materials,” J. Opt. Soc. Am. B 30, 2584 (2013).
    PDF reprint
  66. X. H. Li, P. C. Li, D. Z. Hu, D. M. Schaadt, and E. T. Yu, “Light trapping in thin-film solar cells via scattering by nanostructured antireflection coatings,” J. Appl. Phys. 114, 044310 (2013).
    PDF reprint
  67. Y.-F. Chang, L. Ji, Z.-J. Wu, F. Zhou, Y. Wang, F. Xue, B. Fowler, E. T. Yu, P. S. Ho, and J. C. Lee, “Oxygen-induced bi-modal failure phenomenon in SiOx-based resistive switching memory,” Appl. Phys. Lett. 103, 033521 (2013).
    PDF reprint
  68. K. W. Park, H. P. Nair, A. M. Crook, S. R. Bank, and E. T. Yu, “Quantitative scanning thermal microscopy of ErAs/GaAs superlattice structures grown by molecular beam epitaxy,” Appl. Phys. Lett. 102, 061912 (2013).
    PDF reprint
  69. P. C. Li and E. T. Yu, “Wide-angle wavelength-selective multilayer optical metasurfaces robust to interlayer misalignment,” J. Opt. Soc. Am. B 30, 27 (2013).
    PDF reprint
  70. C. O. McPheeters and E. T. Yu, “Computational analysis of thin film InGaAs/G aAs quantum well solar cells with back side light trapping structures,” Opt. Express 20, A864 (2012).
    PDF reprint
  71. K. W. Park, V. D. Dasika, H. P. Nair, A. M. Crook, S. R. Bank, and E. T. Yu, “Conductivity and structure of ErAs nanoparticles embedded in GaAs pn junctions analyzed via conductive atomic force microscopy,” Appl. Phys. Lett. 100, 233117 (2012).
    PDF reprint
  72. C. O. McPheeters, D. Hu, D. M. Schaadt, and E. T. Yu, “Semiconductor heterostructures and optimization of light trapping structures for efficient thin-film solar cells,” J. Opt. 14, 024007 (2012).
    PDF reprint
  73. J. H. Yum, G. Bersuker, T. Akyol, D. A. Ferrer, M. Lei, K. W. Park, T. W. Hudnall, M. C. Downer, C. W. Bielawski, E. T. Yu, J. Price, J. C. Lee, and S. K. Banerjee, “Epitaxial ALD BeO: Efficient Oxygen Diffusion Barrier for EOT Scaling and Reliability Improvement,” IEEE Trans. Electron Devices 58, 4384 (2011).
    PDF reprint
  74. P. C. Li, Y. Zhao, A. Alu, and E. T. Yu, “Experimental realization and modeling of a subwavelength frequency-selective plasmonic metasurface,” Appl. Phys. Lett. 99, 221106 (2011).
    PDF reprint
  75. K. W. Park, H. P. Nair, A. M. Crook, S. R. Bank, and E. T. Yu, “Scanning capacitance microscopy of ErAs nanoparticles embedded in GaAs Pn junctions,” Appl. Phys. Lett. 99, 133114 (2011).
    PDF reprint
  76. E. T. Yu and J. van de Lagemaat, “Photon management for photovoltaics,” MRS Bulletin 36, 424 (2011).
    PDF reprint
  77. L. Zhu and E. T. Yu, “Ballistic transport and electrical spin signal enhancement in a nanoscale three-terminal spintronic device,” Appl. Phys. Lett. 98, 142115 (2011).
    PDF reprint
    Supporting Information file
  78. D. Hu, C. O. McPheeters, E. T. Yu, and D. M. Schaadt, “Improvement of performance of InAs quantum dot solar cell by inserting thin AlAs layers,” Nanoscale Res. Lett. 6, 83 (2011).
    PDF reprint
  79. L. Zhu and E. T. Yu, “Influence of surface treatment and interface layers on electrical spin injection efficiency and transport in InAs,” J. Vac. Sci. Technol. B 28, 1164 (2010).
    PDF reprint
  80. W. Melitz, J. Shen, S. Lee, J. S. Lee, A. C. Kummel, R. Droopad, and E. T. Yu, “Scanning tunneling spectroscopy and Kelvin probe force microscopy investigation of Fermi energy level pinning mechanism on InAs and InGaAs clean surfaces,” J. Appl. Phys. 108, 023711 (2010).
    PDF reprint
  81. L. Q. Wang, E. Yu, Y. Taur, and P. Asbeck, “Design of tunneling field-effect transistors based on staggered heterojunctions for ultralow-power applications,” IEEE Electron Device Lett. 31, 431 (2010).
    PDF reprint
  82. J. J. M. Law, E. T. Yu, G. Koblmuller, F. Wu, and J. S. Speck, “Low defect-mediated reverse-bias leakage in (0001) GaN via high-temperature molecular-beam epitaxy,” Appl. Phys. Lett. 96, 102111 (2010).
    PDF reprint
  83. S. H. Lim and E. T. Yu, “Ultraviolet and solar-blind spectral imaging with subwavelength transmission gratings,” Appl. Phys. Lett. 95, 161107 (2009).
    PDF reprint
  84. C. O. McPheeters, C. J. Hill, S. H. Lim, D. Derkacs, D. Z. Ting, and E. T. Yu, “Improved performance of In(Ga)As/GaAs quantum dot solar cells via light scattering by nanoparticles,” J. Appl. Phys. 106, 056101 (2009).
    PDF reprint
  85. A. Arriagada, E. T. Yu, and P. Bandaru, “Determination of thermal parameters of one-dimensional nanostructures through a thermal transient method,” J. Therm. Anal. Calorim. 97, 1023 (2009).
    PDF reprint
  86. S. Raychaudhuri, S. A. Dayeh, D. Wang, and E. T. Yu, “Precise semiconductor nanowire placement through dielectrophoresis,” Nano Lett. 9, 2260 (2009).
    PDF reprint
  87. S. A. Dayeh, E. T. Yu, and D. Wang, “Surface Diffusion and Substrate – Nanowire Adatom Exchange in InAs Nanowire Growth,” Nano Lett. 9, 1967 (2009).
    PDF reprint
  88. S. H. Lim, D. Derkacs, and E. T. Yu, “Light scattering into silicon-on-insulator waveguide modes by random and periodic nanodot gold arrays,” J. Appl. Phys. 105, 073101 (2009).
    PDF reprint
  89. S. A. Dayeh, D. Susac, K. L. Kavanagh, E. T. Yu, and D. Wang, “Structural and room-temperature transport properties of zincblende and wurtzite InAs nanowires,” Adv. Func. Mater. 19, 2102 (2009).
    PDF reprint
  90. J. J. M. Law, S. A. Dayeh, D. Wang, and E. T. Yu, “Scanning capacitance characterization of potential screening in InAs nanowire devices,” J. Appl. Phys. 105, 014306 (2009).
    PDF reprint
  91. S. A. Dayeh, E. T. Yu, and D. Wang, “Transport coefficients of InAs nanowires as function of their diameter,” Small 5, 77 (2009).
    PDF reprint
  92. S. A. Dayeh, P. Chen, Y. Jing, E. T. Yu, S. S. Lau, and D. Wang, “Vertical integration and electrical isolation of InAs nanowires on insulator on silicon,” Appl. Phys. Lett. 93, 203109 (2008).
    PDF reprint
  93. S. A. Dayeh, D. Susac, K. L. Kavanagh, E. T. Yu, and D. Wang, “Field dependent transport properties in InAs nanowire field effect transistors,” Nano Lett. 8, 3114 (2008).
    PDF reprint
  94. P. Matheu, S. H. Lim, D. Derkacs, C. McPheeters, and E. T. Yu, “Metal and dielectric nanoparticle scattering for improved optical absorption in photovoltaic devices,” Appl. Phys. Lett. 93, 113108 (2008).
    PDF reprint
  95. D. Derkacs, W. V. Chen, P. M. Matheu, S. H. Lim, P. K. L. Yu, and E. T. Yu, “Nanoparticle-induced light scattering for improved performance of quantum-well solar cells,” Appl. Phys. Lett. 93, 091107 (2008).
    PDF reprint
  96. C. J. Novotny, E. T. Yu, and P. K. L. Yu, “InP nanowire/polymer hybrid photodiode,” Nano Lett. 8, 775 (2008).
    PDF reprint
  97. J. J. M. Law, E. T. Yu, B. A. Haskell, P. T. Fini, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Characterization of nanoscale electronic structure in nonpolar GaN using scanning capacitance microscopy,” J. Appl. Phys. 103, 014305 (2008).
    PDF reprint
  98. S. A. Dayeh, E. T. Yu, and D. Wang, “Growth of InAs nanowires on SiO2 substrates: nucleation, evolution and role of Au nanoparticles,” J. Phys. Chem. C 111, 13331 (2007).
    PDF reprint
  99. S. A. Dayeh, E. T. Yu, and D. Wang, “Excess indium and substrate effects on the growth of InAs nanowires,” Small 3, 1683 (2007).
    PDF reprint
  100. S. A. Dayeh, E. T. Yu, and D. Wang, “III-V nanowire growth mechanism: V/III ratio and temperature effects,” Nano Lett. 7, 2486 (2007).
    PDF reprint
  101. X. Zhou, S. A. Dayeh, D. Wang, and E. T. Yu, “Scanning gate microscopy of InAs nanowires,” Appl. Phys. Lett. 90, 233118 (2007).
    PDF reprint
  102. S. A. Dayeh, C. Soci, P. K. L. Yu, E. T. Yu, and D. Wang, “Transport properties of InAs nanowire field-effect transistors: the effects of surface states,” J. Vac. Sci. Technol. B 25, 1432 (2007).
    PDF reprint
  103. X. Zhou, S. A. Dayeh, D. Wang, and E. T. Yu, “Analysis of local carrier modulation in InAs nanowire field-effect transistors,” J. Vac. Sci. Technol. B 25, 1427 (2007).
    PDF reprint
  104. S. H. Lim, W. Mar, P. Matheu, D. Derkacs, and E. T. Yu, “Photocurrent spectroscopy of optical absorption enhancement in silicon photodiodes via scattering from surface plasmon polaritons in gold nanoparticles,” J. Appl. Phys. 101, 104309 (2007).
    PDF reprint
  105. S. A. Dayeh, C. Soci, P. K. L. Yu, E. T. Yu, and D. Wang, “Influence of surface states on the extraction of transport parameters from InAs nanowire field-effect transistors,” Appl. Phys. Lett. 90, 162112 (2007).
    PDF reprint
  106. S. A. Dayeh, D. P. R. Aplin, X. Zhou, P. K. L. Yu, E. T. Yu, and D. Wang, “High electron mobility InAs nanowire field-effect transistors,” Small 3, 326 (2007).
    PDF reprint
  107. D. Derkacs, S. H. Lim, P. Matheu, W. Mar, and E. T. Yu, “Improved performance of amorphous silicon solar cells via scattering from surface plasmon polaritons in nearby metallic nanoparticles,” Appl. Phys. Lett. 89, 093103 (2006).
    PDF reprint
  108. X. Zhou, S. A. Dayeh, D. Aplin, D. Wang, and E. T. Yu, “Direct observation of ballistic and drift carrier transport regimes in InAs nanowires,” Appl. Phys. Lett. 89, 053113 (2006).
    PDF reprint
  109. S. Raychaudhuri and E. T. Yu, “Calculation of critical dimensions for wurtzite and cubic zincblende coaxial nanowire heterostructures,” J. Vac. Sci. Technol. B 24, 2053 (2006).
    PDF reprint
  110. X. Zhou, S. A. Dayeh, D. Aplin, D. Wang, and E. T. Yu, “Scanned electrical probe characterization of carrier transport behavior in InAs nanowires,” J. Vac. Sci. Technol. B 24, 2036 (2006).
    PDF reprint
  111. S. Raychaudhuri and E. T. Yu, “Critical dimensions in coherently strained coaxial nanowire heterostructures,” J. Appl. Phys. 99, 114308 (2006).
    PDF reprint
  112. B. S. Simpkins, H. Zhang, and E. T. Yu, “Defects in nitride semiconductors: From nanoscale imaging to macroscopic device behavior,” Mater. Sci. Semicond. Processing, 9, 308 (2006).
    PDF reprint
  113. X. Zhou, E. T. Yu, D. S. Green, and J. S. Speck, “Dependence of local electronic structure in p-type GaN on crystal polarity and presence of inversion domain boundaries,” J. Vac. Sci. Technol. B 24, 245 (2006).
    PDF reprint
  114. H. Zhang and E. T. Yu, “Demonstration and analysis of reduced reverse bias leakage current via design of nitride semiconductor heterostructures grown by molecular beam epitaxy,” J. Appl. Phys. 99, 014501 (2006).
    PDF reprint
  115. H. Zhang, E. J. Miller, and E. T. Yu, “Analysis of leakage current mechanisms in Schottky contacts to GaN and Al0.25Ga0.75N/GaN grown by molecular-beam epitaxy,” J. Appl. Phys. 99, 023703 (2006).
    PDF reprint
  116. X. Zhou, E. T. Yu, D. I. Florescu, J. C. Ramer, D. S. Lee, S. M. Ting, and E. A. Armour, “Imaging of thickness and compositional fluctuations in InGaN/GaN quantum wells by scanning capacitance microscopy,” J. Vac. Sci. Technol. B 23, 1808 (2005).
    PDF reprint
  117. X. Zhou, E. T. Yu, D. I. Florescu, J. C. Ramer, D. S. Lee, S. M. Ting, and E. A. Armour, “Observation of In concentration variations in InGaN/GaN quantum-well heterostructures by scanning capacitance microscopy,” Appl. Phys. Lett. 86, 202113 (2005).
    PDF reprint
  118. D. M. Schaadt, B. Feng, and E. T. Yu, “Enhanced semiconductor optical absorption via surface plasmon excitation in metal nanoparticles,” Appl. Phys. Lett. 86, 063106 (2005).
    PDF reprint
  119. X. Zhou, E. T. Yu, D. Florescu, J. C. Ramer, D. S. Lee, and E. A. Armour, “Observation of subsurface monolayer thickness fluctuations in InGaN/GaN quantum wells by scanning capacitance microscopy and spectroscopy,” Appl. Phys. Lett. 85, 407 (2004).
    PDF reprint
  120. D. M. Schaadt, E. T. Yu, V. Vaithyanathan, and D. G. Schlom, “Nanoscale current transport in epitaxial SrTiO3 on n+-Si (001) investigated with conductive atomic force microscopy,” J. Vac. Sci. Technol. B 22, 2030 (2004).
    PDF reprint
  121. H. Zhang, E. J. Miller, E. T. Yu, C. Poblenz, and J. S. Speck, “Measurement of polarization charge and conduction band offset at InxGa1-xN/GaN heterojunction interfaces,” Appl. Phys. Lett. 84, 4644 (2004).
    PDF reprint
  122. H. Zhang, E. J. Miller, E. T. Yu, C. Poblenz, and J. S. Speck, “Analysis of interface electronic structure in InxGa1-xN/GaN heterostructures,” J. Vac. Sci. Technol. B 22, 2169 (2004).
    PDF reprint
  123. B. S. Simpkins, E. T. Yu, U. Chowdhury, M. M. Wong, T. G. Zhu, D. W. Yoo, and R. D. Dupuis, “Local conductivity and surface photovoltage variations due to magnesium segregation in p-type GaN,” J. Appl. Phys. 95, 6225 (2004).
    PDF reprint
  124. E. J. Miller, E. T. Yu, P. Waltereit, and J. S. Speck, “Analysis of reverse bias leakage current mechanisms in GaN grown by molecular beam epitaxy,” Appl. Phys. Lett. 84, 535 (2004).
    PDF reprint
  125. E. J. Miller, D. M. Schaadt, E. T. Yu, X. L. Sun, L. J. Brillson, P. Waltereit, and J. S. Speck, “Origin and microscopic mechanism for suppression of leakage currents in Schottky contacts to GaN grown by molecular-beam epitaxy,” J. Appl. Phys. 94, 7611 (2003).
    PDF reprint
  126. B. S. Simpkins, E. T. Yu, P. Waltereit, and J. S. Speck, “Correlated scanning Kelvin probe and conductive atomic force microscopy studies of dislocations in gallium nitride,” J. Appl. Phys. 94, 1448 (2003).
    PDF reprint
  127. B. S. Simpkins and E. T. Yu, “Influence of AlN Buffer on Electronic Properties and Dislocation Microstructure of AlGaN/GaN Grown by Molecular Beam Epitaxy on SiC,” J. Vac. Sci. Technol. B 21, 1818 (2003).
    PDF reprint
  128. P. A. Rosenthal, Y. Taur, and E. T. Yu, “Direct measurement and characterization of n+ super-halo implants in a 120 nm gate-length Si metal-oxide-semiconductor field-effect transistor using cross-sectional scanning capacitance microscopy,” Appl. Phys. Lett. 81, 3993 (2002).
    PDF reprint
  129. E. J. Miller, D. M. Schaadt, E. T. Yu, P. Waltereit, C. Poblenz, and J. S. Speck, “Reverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment,” Appl. Phys. Lett. 82, 1293 (2003).
    PDF reprint
  130. D. M. Schaadt and E. T. Yu, “Scanning capacitance spectroscopy of an AlGaN/GaN heterostructure field-effect transistor: analysis of probe tip effects,” J. Vac. Sci. Technol. B 20, 1671 (2002).
    PDF reprint
  131. E. J. Miller, E. T. Yu, C. Poblenz, C. Elsass, and J. S. Speck, “Direct measurement of the polarization charge in AlGaN/GaN heterostructures using capacitance-voltage carrier profiling,” Appl. Phys. Lett. 80, 3551 (2002).
    PDF reprint
  132. S. L. Zuo, Y. G. Hong, C. W. Tu, E. T. Yu, and J. F. Klem, “Cross-sectional scanning tunneling microscopy of GaAsSb/GaAs quantum well structures,” J. Appl. Phys. 92, 3761 (2002).
    PDF reprint
  133. B. S. Simpkins, D. M. Schaadt, E. T. Yu, and R. J. Molnar, “Scanning Kelvin probe microscopy of surface electronic structure in GaN grown by hydride vapor phase epitaxy,” J. Appl. Phys. 91, 9924 (2002).
    PDF reprint
  134. E. J. Miller, D. M. Schaadt, E. T. Yu, C. Poblenz, C. Elsass, and J. S. Speck, “Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope,” J. Appl. Phys. 91, 9821 (2002).
    PDF reprint
  135. L. Jia, E. T. Yu, D. Keogh, S. S. Lau, P. M. Asbeck, P. Miraglia, A. Roskowski, and R. F. Davis, “Polarization charges and polarization-induced barriers in AlxGa1-xN/GaN and InyGa1-yN/GaN heterostructures,” Appl. Phys. Lett. 79, 2916 (2001).
    PDF reprint
  136. B. B. Maranville, A. L. Shapiro, F. Hellman, D. M. Schaadt, and E. T. Yu, “Miscut-angle dependence of perpendicular magnetic anisotropy in thin epitaxial CoPt3 films grown on vicinal MgO,” Appl. Phys. Lett. 81, 517 (2002).
    PDF reprint
  137. E. J. Miller and E. T. Yu, “Influence of the dipole interaction energy on clustering in InxGa1-xN alloys,” Appl. Phys. Lett. 78, 2303 (2001).
    PDF reprint
  138. D. M. Schaadt, E. J. Miller, E. T. Yu, and J. M. Redwing, “Quantitative analysis of nanoscale electronic properties in an AlxGa1-xN/GaN heterostructure field-effect transistor structure,” J. Vac. Sci. Technol. B 19, 1671 (2001).
    PDF reprint
  139. X. Z. Dang, E. T. Yu, E. J. Piner, and B. T. McDermott, “Influence of surface processing and passivation on carrier concentrations and transport properties in AlGaN/GaN heterostructures,” J. Appl. Phys. 90, 1357 (2001).
    PDF reprint
  140. D. M. Schaadt, E. J. Miller, E. T. Yu, and J. M. Redwing, “Lateral variations in threshold voltage of an AlxGa1-xN/GaN heterostructure field-effect transistor,” Appl. Phys. Lett. 78, 88 (2001).
    PDF reprint
  141. K. V. Smith, E. T. Yu, C. Elsass, B. Heying, and J. S. Speck, “Localized variations in electronic structure of AlGaN/GaN heterostructures grown by molecular-beam epitaxy,” Appl. Phys. Lett. 79, 2749 (2001).
    PDF reprint
  142. E. J. Miller, X. Z. Dang, and E. T. Yu, “Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors,” J. Appl. Phys. 88, 5951 (2000).
    PDF reprint
  143. K. V. Smith, X. Z. Dang, E. T. Yu, and J. M. Redwing, “Charging effects in AlGaN/GaN heterostructures probed using scanning capacitance microscopy,” J. Vac. Sci. Technol. B 18, 2304 (2000).
    PDF reprint
  144. E. J. Miller, X. Z. Dang, H. H. Wieder, P. M. Asbeck, E. T. Yu, G. J. Sullivan, and J. M. Redwing, “Trap characterization by gate-drain conductance and capacitance dispersion studies in an AlGaN/GaN HFET,” J. Appl. Phys. 87, 8070 (2000).
    PDF reprint
  145. D. M. Schaadt, E. T. Yu, S. Sankar, and A. E. Berkowitz, “Characterization and analysis of a novel hybrid magnetoelectronic device for magnetic field sensing,” J. Vac. Sci. Technol. A 18, 1834 (2000).
    PDF reprint
  146. D. M. Schaadt, E. T. Yu, S. Sankar, and A. E. Berkowitz, “Proximal probe characterization of nanoscale charge transport properties in Co/SiO2 multilayer structures,” J. Elec. Mater. 29, 1299 (2000).
    PDF reprint
  147. K. V. Smith, E. T. Yu, J. M. Redwing, and K. S. Boutros, “Local electronic properties of AlGaN/GaN heterostructures probed by scanning capacitance microscopy,” J. Elec. Mater. 29, 274 (2000).
    PDF reprint
  148. P. A. Rosenthal, E. T. Yu, R. L. Pierson, and P. J. Zampardi, “Characterization of AlxGa1-xAs/GaAs heterojunction bipolar transistor structures using cross-sectional scanning force microscopy,” J. Appl. Phys. 87, 1937 (2000).
    PDF reprint
  149. K. V. Smith, E. T. Yu, J. M. Redwing, and K. S. Boutros, “Scanning capacitance microscopy of AlGaN/GaN heterostructure field-effect transistor epitaxial layer structures,” Appl. Phys. Lett. 75, 2250 (1999).
    PDF reprint
  150. D. M. Schaadt, E. T. Yu, S. Sankar, and A. E. Berkowitz, “A monolithic field-effect-transistor-amplified magnetic field sensor,” Appl. Phys. Lett. 75, 731 (1999).
    PDF reprint
  151. P. M. Asbeck, E. T. Yu, S. S. Lau, W. Sun, X. Dang, and C. Shi, “Enhancement of base conductivity via the piezoelectric effect in AlGaN/GaN HBT’s,” Solid State Electronics 44, 211 (2000).
    PDF reprint
  152. X. Z. Dang, P. M. Asbeck, E. T. Yu, G. J. Sullivan, M. Y. Chen, B. T. McDermott, K. S. Boutros, and J. M. Redwing, “Measurement of drift mobility in AlGaN/GaN heterostructure field-effect transistor,” Appl. Phys. Lett. 74, 3890 (1999).
    PDF reprint
  153. X. Z. Dang, R. J. Welty, D. Qiao, P. M. Asbeck, S. S. Lau, E. T. Yu, K. S. Boutros, and J. M. Redwing, “Fabrication and characterization of enhanced barrier AlGaN/GaN heterostructure field-effect transistor,” Electronics Letters 35, 602 (1999).
    PDF reprint
  154. E. T. Yu, S. L. Zuo, W. G. Bi, C. W. Tu, A. A. Allerman, and R. M. Biefeld, “Nanometer-scale compositional structure in III-V semiconductor heterostructures characterized by scanning tunneling microscopy,” J. Vac. Sci. Technol. A 17, 2246 (1999).
    PDF reprint
  155. E. T. Yu, P. M. Asbeck, S. S. Lau, X. Z. Dang, and G. J. Sullivan, “Spontaneous and piezoelectric polarization effects in III-V nitride heterostructures,” J. Vac. Sci. Technol. B 17, 1742 (1999).
    PDF reprint
  156. S. L. Zuo, E. T. Yu, A. A. Allerman, and R. M. Biefeld, “Cross-sectional scanning tunneling microscopy of InAsSb/InAsP superlattices,” J. Vac. Sci. Technol. B 17, 1781 (1999).
    PDF reprint
  157. C. Shi, P. M. Asbeck, and E. T. Yu, “Piezoelectric polarization associated with dislocations in wurtzite GaN,” Appl. Phys. Lett. 74, 573 (1999).
    PDF reprint
  158. C. H. Yun, N. W. Cheung, Y. Zheng, R. J. Welty, Z. F. Guan, K. V. Smith, P. M. Asbeck, E. T. Yu, and S. S. Lau, “Transfer of patterned ion-cut silicon layers,” Appl. Phys. Lett. 73, 2772 (1998).
    PDF reprint
  159. D. M. Schaadt, E. T. Yu, S. Sankar, and A. E. Berkowitz, “Charge storage in Co nanoclusters embedded in SiO2 by scanning force microscopy,” Appl. Phys. Lett. 74, 472 (1999).
    PDF reprint
  160. E. T. Yu, X. Z. Dang, L. S. Yu, D. Qiao, P. M. Asbeck, S. S. Lau, G. J. Sullivan, K. S. Boutros, and J. M. Redwing, “Schottky barrier engineering in III-V nitrides via the piezoelectric effect,” Appl. Phys. Lett. 73, 1880 (1998).
    PDF reprint
  161. B. L. Stein, E. T. Yu, E. T. Croke, A. T. Hunter, T. Laursen, J. W. Mayer, and C. C. Ahn, “Deep-level transient spectroscopy of Si/SiGeC heterostructures,” Appl. Phys. Lett. 73, 647 (1998).
    PDF reprint
  162. X. Z. Dang, D. J. Qiao, C. D. Wang, L.S. Yu, S. S. Lau, E. T. Yu, and J. M. Redwing, “Persistent photoconductivity and defect levels in n-type AlGaN/GaN heterostructures,” Appl. Phys. Lett. 72, 2745 (1998).
    PDF reprint
  163. E. T. Yu, S. L. Zuo, W. G. Bi, and C. W. Tu, “Cross-Sectional Scanning Tunneling Microscopy of Atomic-Scale Structure in Semiconductor Heterostructures,” Micron 30, 51 (1999).
    PDF reprint
  164. S. L Zuo, W. G. Bi, C. W. Tu, and E. T. Yu, “A scanning tunneling microscopy study of atomic-scale clustering in InAsP/InP heterostructures,” Appl. Phys. Lett. 72, 2135 (1998).
    PDF reprint
  165. C. D. Wang, L. S. Yu, S. S. Lau, E. T. Yu, W. Kim, A. Botchkarev, and H. Morkoc, “Deep level defects in n-type GaN grown by molecular-beam epitaxy,” Appl. Phys. Lett. 72, 1211 (1998).
    PDF reprint
  166. S. L. Zuo, W. G. Bi, C. W. Tu, and E. T. Yu, “Atomic Scale Compositional Structure of InAsP/InP and InNAsP/InP Heterostructures Grown by Molecular-Beam Epitaxy,” J. Vac. Sci. Technol. B 16, 2395 (1998).
    PDF reprint
  167. B. L. Stein, E. T. Yu, E. T. Croke, A. T. Hunter, T. Laursen, A. E. Bair, J. W. Mayer, and C. C. Ahn, “Electronic Properties of Si/Si1-x-yGexCy Heterojunctions,” J. Vac. Sci. Technol. B 16, 1639 (1998).
    PDF reprint
  168. E. T. Yu, G. J. Sullivan, P. M. Asbeck, C. D. Wang, D. Qiao, and S. S. Lau, “Measurement of Piezoelectrically Induced Charge in GaN/AlGaN Heterostructure Field-Effect Transistors,” Appl. Phys. Lett. 71, 2794 (1997).
    PDF reprint
  169. A. Y. Lew, S. L. Zuo, E. T. Yu, D. H. Chow, and R. H. Miles, “Correlation Between Atomic-Scale Structure and Mobility Anisotropy in InAs/Ga1-xInxSb Superlattices,” Phys. Rev. B 57, 6534 (1998).
    PDF reprint
  170. E. T. Yu, “Atomic-Scale Characterization of Semiconductor Heterostructures By Cross-Sectional Scanning Tunneling Microscopy,” MRS Bulletin 22, 22 (1997).
  171. E. T. Yu and S. J. Pennycook, “Nanoscale Characterization of Materials,” MRS Bulletin 22, 17 (1997).
  172. P. M. Asbeck, E. T. Yu, S. S. Lau, G. J. Sullivan, J. Van Hove, and J. M. Redwing, “Piezoelectric Charge Densities in AlGaN/GaN HFET’s,” Electronics Letters 33, 1230 (1997).
    PDF reprint
  173. E. T. Yu, “Cross-Sectional Scanning Tunneling Microscopy,” Chemical Reviews 97, 1017 (1997).
    PDF reprint
  174. B. L. Stein, E. T. Yu, E. T. Croke, A. T. Hunter, T. Laursen, A. E. Bair, J. W. Mayer, and C. C. Ahn, “Measurement of Band Offsets in Si/Si1-xGex and Si1-x-yGexCy Heterojunctions,” J. Vac. Sci. Technol. B 15, 1108 (1997).
  175. Q. Z. Liu, L. Shen, K. V. Smith, E. T. Yu, S. S. Lau, N. R. Perkins, and T. F. Kuech, “Epitaxy of Al Films on GaN Studied by Reflection High Energy Electron Diffraction and Atomic Force Microscopy,” Appl. Phys. Lett. 70, 990 (1997).
    PDF reprint
  176. A. Y. Lew, S.-L. Zuo, E. T. Yu, and R. H. Miles, “Anisotropy and Growth-Sequence Dependence of Atomic-Scale Interface Structure in InAs/Ga1-xInxSb Superlattices,” Appl. Phys. Lett. 70, 75 (1997).
    PDF reprint
  177. E. T. Yu, “Nanoscale Characterization of Semiconductor Materials and Devices Using Scanning Probe Techniques,” Materials Science and Engineering Reports R17, 147 (1996).
    PDF reprint
  178. Y.-H. Zhang, A. Y. Lew, E. T. Yu, and Y. Chen, “Microstructural Properties of InAs/InAs1-xSbx Superlattices and InAs1-xSbx Ordered Alloys Grown by Modulated Molecular Beam Epitaxy,” J. Cryst. Growth 175/176, 833 (1997).
  179. B. L. Stein, E. T. Yu, E. T. Croke, A. T. Hunter, T. Laursen, A. Bair, and J. W. Mayer, “Band Offsets in Si/Si1-x-yGexCy Heterojunctions Measured by Admittance Spectroscopy,” Appl. Phys. Lett. 70, 3413 (1997).
    PDF reprint
  180. A. Y. Lew, E. T. Yu, and Y.-H. Zhang, “Atomic-Scale Structure of InAs/InAsSb Superlattices Grown by Modulated Molecular-Beam Epitaxy,” J. Vac. Sci. Technol. B 14, 2940 (1996).
  181. A. Y. Lew, C. H. Yan, C. W. Tu, and E. T. Yu, “Characterization of Arsenide/Phosphide Heterostructure Interfaces Grown by Gas-Source Molecular-Beam Epitaxy,” Appl. Phys. Lett. 67, 932 (1995).
  182. E. T. Yu, K. Barmak, P. Ronsheim, M. B. Johnson, P. McFarland, and J.-M. Halbout, “Two-Dimensional Profiling of Shallow Junctions in Si Metal-Oxide-Semiconductor Structures Using Scanning Tunneling Spectroscopy and Transmission Electron Microscopy,” J. Appl. Phys. 79, 2115 (1996).
  183. C. H. Yan, A. Y. Lew, E. T. Yu, and C. W. Tu, “P2 Induced P/As Exchange on GaAs During Gas-Source Molecular-Beam Epitaxy Growth Interruption,” J. Cryst. Growth 164, 77 (1996).
  184. A. Y. Lew, C. H. Yan, C. W. Tu, and E. T. Yu, “Characterization of Arsenide/Phosphide Heterostructure Interfaces by Scanning Tunneling Microscopy,” Appl. Surf. Sci. 104, 522 (1996).
  185. A. Y. Lew, C. H. Yan, R. B. Welstand, J. T. Zhu, C. W. Tu, E. T. Yu, and P. K. L. Yu, “Interface Structure in Arsenide/Phosphide Heterostructures Grown by Gas-Source MBE and Low-Pressure MOVPE,” J. Elec. Mater. 26, 64 (1997).
  186. A. Y. Lew, E. T. Yu, D. H. Chow, and R. H. Miles, “Scanning Tunneling Microscopy of InAs/Ga1-xInxSb Superlattices,” Appl. Phys. Lett. 65, 201 (1994).
  187. M. W. Wang, J. F. Swenberg, M. C. Phillips, E. T. Yu, J. O. McCaldin, R. W. Grant, and T. C. McGill, “X-Ray Photoelectron Spectroscopy Measurement of Valence Band Offsets for Mg-Based Semiconductor Compounds,” Appl. Phys. Lett. 64, 3455 (1994).
  188. M. W. Wang, J. F. Swenberg, R. J. Miles, M. C. Phillips, E. T. Yu, J. O. McCaldin, R. W. Grant, and T. C. McGill, “Measurement of the MgSe/Cd0.54Zn0.46Se Valence Band Offset by X-ray Photoelectron Spectroscopy,” J. Cryst. Growth 138, 508 (1994).
  189. E. T. Yu, J. O. McCaldin, and T. C. McGill, “Band Offsets in Semiconductor Heterojunctions,” Solid State Phys. 46, 1 (1992).
    PDF reprint
  190. M. W. Wang, M. C. Phillips, J. F. Swenberg, E. T. Yu, J. O. McCaldin, and T. C. McGill, “n-CdSe/p-ZnTe Based Wide Band-Gap Light Emitters – Numerical Simulation and Design,” J. Appl. Phys. 73, 4660 (1993).
  191. E. T. Yu, J.-M. Halbout, A. R. Powell, and S. S. Iyer, “Scanning Tunneling Microscopy and Spectroscopy of Si/SiGe (001) Superlattices,” Appl. Phys. Lett. 61, 3166 (1992).
  192. E. T. Yu, M. B. Johnson, A. R. Powell, J.-M. Halbout, and S. S. Iyer, “Scanning Tunneling Microscopy and Spectroscopy of Si-Based Heterostructures,” J. Vac. Sci. Technol. B 11, 1149 (1993).
  193. E. T. Yu, M. B. Johnson, V. P. Kesan, J.-M. Halbout, and S. S. Iyer, “Cross-Sectional Scanning Tunneling Microscopy of MBE-Grown Si p-n Junctions and Si/SiGe Superlattices,” J. Cryst. Growth 127, 435 (1993).
  194. R. M. Feenstra, E. T. Yu, J. M. Woodall, P. D. Kirchner, C. Lin, and G. D. Pettit, “Cross-Sectional Imaging and Spectroscopy of GaAs Doping Superlattices by Scanning Tunneling Microscopy,” Appl. Phys. Lett. 61, 795 (1992).
  195. E. T. Yu, M. B. Johnson, and J.-M. Halbout, “Electrical Profiling of Si (001) p-n Junctions by Scanning Tunneling Microscopy,” Appl. Phys. Lett. 61, 201 (1992).
  196. E. T. Yu, M. C. Phillips, D. H. Chow, D. A. Collins, M. W. Wang, J. O. McCaldin, and T. C. McGill, “Interfacial Reactions and Band Offsets in the AlSb/GaSb/ZnTe Material System,” Phys. Rev. B 46, 13379 (1992).
  197. D. Z.-Y. Ting, E. T. Yu, and T. C. McGill, “Multiband Treatment of Quantum Transport in Interband Tunnel Devices,” Phys. Rev. B 45, 3583 (1992).
  198. D. Z.-Y. Ting, E. T. Yu, and T. C. McGill, “Effect of Band Mixing on Hole Tunneling Times in GaAs/AlAs Double Barrier Heterostructures,” Phys. Rev. B 45, 3576 (1992).
  199. E. T. Yu, M. C. Phillips, J. O. McCaldin, and T. C. McGill, “Measurement of the CdSe/ZnTe Valence Band Offset by XPS,” J. Vac. Sci. Technol. B 9, 2233 (1991).
  200. D. Z.-Y. Ting, E. T. Yu, and T. C. McGill, “Band Structure Effects on Interband Tunnel Structures,” J. Vac. Sci. Technol. B 9, 2405 (1991).
  201. E. T. Yu, D. A. Collins, D. Z.-Y. Ting, D. H. Chow, and T. C. McGill, “Demonstration of Resonant Transmission in InAs/GaSb/InAs Interband Tunneling Devices,” Appl. Phys. Lett. 57, 2675 (1990).
  202. D. Z.-Y. Ting, E. T. Yu, and T. C. McGill, “The Role of Heavy-Hole States in Interband Tunnel Structures,” Appl. Phys. Lett. 58, 292 (1991).
  203. M. C. Phillips, E. T. Yu, Y. Rajakarunanayake, J. O. McCaldin, D. A. Collins, and T. C. McGill, “Characterization of CdSe/ZnTe Heterojunctions,” J. Cryst. Growth 111, 820 (1991).
  204. D. A. Collins, D. Z.-Y. Ting, D. H. Chow, E. T. Yu, J. R. Soderstrom, Y. Rajakarunanayake, and T. C. McGill, “Interband Tunneling in InAs/GaSb/AlSb Heterostructures,” J. Cryst. Growth 111, 664 (1991).
  205. D. Z.-Y. Ting, D. A. Collins, E. T. Yu, D. H. Chow, and T. C. McGill, “Large Peak Current Densities in Novel Resonant Interband Tunneling Heterostructures,” Appl. Phys. Lett. 57, 1257 (1990).
  206. D. A. Collins, E. T. Yu, Y. Rajakarunanayake, J. R. Soderstrom, D. Z.-Y. Ting, D. H. Chow, and T. C. McGill, “Experimental Observation of Negative Differential Resistance from an InAs/GaSb Interface,” Appl. Phys. Lett. 57, 683 (1990).
  207. D. A. Collins, D. H. Chow, D. Z.-Y. Ting, E. T. Yu, J. R. Soderstrom, and T. C. McGill, “Evidence for Coherent Interaction Between Quantum Well States in AlAs/GaAs Triple Barrier Heterostructures,” Superlattices and Microstructures 8, 455 (1990).
  208. E. T. Yu, E. T. Croke, D. H. Chow, D. A. Collins, M. C. Phillips, T. C. McGill, J. O. McCaldin, and R. H. Miles, “Measurement of the Valence Band Offset in Novel Heterojunction Systems: Si/Ge (100) and AlSb/ZnTe (100),” J. Vac. Sci. Technol. B 8, 908 (1990).
  209. D. Z.-Y. Ting, E. T. Yu, D. A. Collins, D. H. Chow, and T. C. McGill, “Modeling of Novel Heterojunction Tunnel Structures,” J. Vac. Sci. Technol. B 8, 810 (1990).
  210. D. H. Chow, E. T. Yu, J. R. Soderstrom, D. Z.-Y. Ting, and T. C. McGill, “Negative Differential Resistance Due to Resonant Interband Tunneling of Holes,” J. Appl. Phys. 68, 3744 (1990).
  211. J. R. Soderstrom, E. T. Yu, M. K. Jackson, Y. Rajakarunanayake, and T. C. McGill, “Two Band Modelling of Narrow Bandgap and Interband Tunneling Devices,” J. Appl. Phys. 68, 1372 (1990).
  212. E. T. Yu, E. T. Croke, T. C. McGill, and R. H. Miles, “Measurement of the Valence Band Offset in Strained Si/Ge (100) Heterojunctions by X-Ray Photoelectron Spectroscopy,” Appl. Phys. Lett. 56, 569 (1990).
  213. D. A. Collins, D. H. Chow, D. Z.-Y. Ting, E. T. Yu, J. R. Soderstrom, and T. C. McGill, “Large Peak-to-Valley Current Ratios in Triple Barrier Heterostructures,” Solid-State Electron. 32, 1095 (1989).
  214. E. T. Yu, D. H. Chow, and T. C. McGill, “Commutativity of the GaAs/AlAs (100) Valence Band Offset,” J. Vac. Sci. Technol. B 7, 391 (1989).
  215. E. T. Yu, M. K. Jackson, and T. C. McGill, “Hole Tunneling Times in GaAs/AlAs Double Barrier Heterostructures,” Appl. Phys. Lett. 55, 744 (1989).
  216. E. T. Yu, D. H. Chow, and T. C. McGill, “Commutativity of the GaAs/AlAs (100) Valence Band Offset,” Phys. Rev. B 38, 12764 (1988).
  217. E. T. Yu and T. C. McGill, “III-V/II-VI Double-Barrier Resonant Tunneling Structures,” Appl. Phys. Lett. 53, 60 (1988).