The pressure dependent properties of monolayer MoS2 was recently published in nanoletters (Dec 2014) showing up to 12% direct gap modulation, the highest experimental bandgap modulation observed so far.

Congratulations to the UT, IISc, Rutgers, and Kaust teams that collaborated intimately on this research.

http://pubs.acs.org/doi/abs/10.1021/nl5036397

Previously, we reported the high-pressure/strain studies on bulk MoS2 resulting in the observation of semiconducting to metallic phase transition in nature communications. Congrats to Avinash and our collaborators.

http://www.nature.com/ncomms/2014/140507/ncomms4731/full/ncomms4731.html