“Researchers at the University of Texas at Austin and the University of Notre Dame, Indiana, both in the US, are the first to have succeeded in making high-performance molybdenite transistors on plastic substrates. The feat, hitherto deemed too difficult, means that the material might be ideal for making high-speed and low-power flexible electronics devices.”
Tag Archives: press
SPIE Newsroom invited feature on Monolithic Graphene-Si VLSI Technology
SPIE Newsroom publishes Prof. Akinwande’s article, entitled “Integrating wafer-scalable graphene with ubiquitous silicon technology“. The article describes how the synthesis of nearly defect-free monolayer graphene can be combined with silicon technology in order to create innovative next-generation electronic and optical systems and sensor devices.
(Nanoletters) Improved graphene transfer and post-transfer restoration article featured on nanotechweb
Improved transfer tactics make better graphene devices
Polymer residues on graphene – routinely left behind after the material is transferred to dielectric substrates like SiO2 – adversely affect its electronic properties. Now, a team of researchers at the University of Texas at Austin has found that using lower concentrations of polymer solution during the transfer process is better, and results in less p-type doping in the carbon material. Treating the graphene surface with a chemical called formamide also temporarily enhances the electronic properties of graphene. The findings will help in making improved, high-performance carbon-based devices in the future.
Spring/Summer schedule of invited talks includes MRS, SPIE, ECS, TechConnect World, CMOSET, and INFOS conferences in addition to invited lecture at Stanford University
Flexible graphene device selected among the “Best of 2012” technical news stories
Our research on state-of-the-art flexible graphene electronics was honored as a key technical news story of 2012. More information is available at nanotechweb.org.
Graphene research featured on Physics World
Our research on graphene CVD growth and device studies featured in the August 2012 issue of Physics World
Wafer-Scale Graphene CVD Growth
Our research on high-quality graphene growth using copper film on oxidized Si is profiled at several sources. The quality of the wafer-scale CVD graphene is comparable to exfoliated natural flakes. Links at Aixtron, Graphene-Info, and electro-IQ.
