Adv. Mat. 2019: Thinnest memory based on h-BN.

Our work on 2D memory has resulted in the thinnest non-volatile memory device. A record for device applications of nanomaterials.

Congrats to Xiaohan Wu and Ruijing Ge who did much of the experimental work and our international collaborators at Peking and Taiwan.

Advanced Materials, 2019.

See news article on PhysicsWorld