December 30, 2016, Filed Under: Lan Yu, Mid-IR, Mid-IR Emitters, NSF Funded, Sukrith Dev, Yujun ZhongLan’s In(Ga)Sb/InAs Quantum Dot work published in JVSTB!! Lan’s paper investigating carrier lifetimes in type-II mid-IR emitters using the In(Ga)Sb/InAs material system published in the Journal of Vacuum Science and Technology B! Congrats Lan!
