Mid-IR Emitters

December 30, 2016, Filed Under: Lan Yu, Mid-IR, Mid-IR Emitters, NSF Funded, Sukrith Dev, Yujun Zhong

Lan’s In(Ga)Sb/InAs Quantum Dot work published in JVSTB!!

Lan’s paper investigating carrier lifetimes in type-II mid-IR emitters using the In(Ga)Sb/InAs material system published in the Journal of Vacuum Science and Technology B! Congrats Lan!

November 28, 2016, Filed Under: Lan Yu, Mid-IR, Mid-IR Emitters, NSF Funded, Prof. Lee Collaboration, Sukrith Dev

Room Temperature InAs QW Lasers published in APL!

Our collaborative effort with Prof. Lee’s group (UIUC), “Room-temperature mid-infrared quantum well lasers on multi-functional metamorphic buffers“, is published in Applied Physics Letters!! Congrats to Daewhan, Lan, and Sukrith!! Semiconductor Today write-up on this work…

November 5, 2015, Filed Under: Lan Yu, Mid-IR Emitters, Prof. Lee Collaboration

J. Appl. Phys. Publication with Yale Group

11-05-2015: Our collaborators’ (Prof. Larry Lee and Daehwan Jung of Yale University) latest, “Mid-infrared electroluminescence from InAs type-I quantum wells grown on InAsP/InP metamorphic buffers”, is published in J. Appl. Phys. Congrats to Daehwan and Lan